NSVBC858BLT1G. Аналоги и основные параметры
Наименование производителя: NSVBC858BLT1G
Маркировка: 3K
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.23 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 150
Корпус транзистора: SOT23
Аналоги (замена) для NSVBC858BLT1G
- подборⓘ биполярного транзистора по параметрам
NSVBC858BLT1G даташит
nsvbc858clt1g.pdf
BC856ALT1G Series General Purpose Transistors PNP Silicon Features http //onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25 C unless other
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf
BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-
nsvbc857blt3g.pdf
BC856ALT1G Series General Purpose Transistors PNP Silicon Features http //onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25 C unless other
nsvbc857cwt1g.pdf
BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement
Другие транзисторы: NSVBC848BWT1G, NSVBC848CDW1T1G, NSVBC848CLT1G, NSVBC850BLT1G, NSVBC850CLT1G, NSVBC857BLT3G, NSVBC857BTT1G, NSVBC857CWT1G, BD135, NSVBC858CLT1G, NSS20101J, NSS20200LT1G, NSS20201LT1G, NSS20201MR6, NSS40300MZ4T1G, NSS40300MZ4T3G, NSS40301MDR2G
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n3904 equivalent | ksa1220 | s9015 | mje3055t datasheet | a733 | irf9630 | mj2955 | mje15030









