Справочник транзисторов. NSVB1706DMW5T1G

 

Биполярный транзистор NSVB1706DMW5T1G Даташит. Аналоги


   Наименование производителя: NSVB1706DMW5T1G
   Маркировка: U6
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 4.7 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 0.1
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SC88A-5 SOT323-5
 

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NSVB1706DMW5T1G Datasheet (PDF)

 0.1. Size:95K  onsemi
nsvb1706dmw5t1g.pdfpdf_icon

NSVB1706DMW5T1G

NSB1706DMW5T1G,NSVB1706DMW5T1GDual Bias ResistorTransistorNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors aredesigned to replace a sin

 9.1. Size:165K  onsemi
nsvb123jpdxv6t1g.pdfpdf_icon

NSVB1706DMW5T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 9.2. Size:165K  onsemi
nsvb143zpdxv6t1g.pdfpdf_icon

NSVB1706DMW5T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

 9.3. Size:165K  onsemi
nsvb124xpdxv6t1g.pdfpdf_icon

NSVB1706DMW5T1G

NSBC114EPDXV6T1G,NSVBC114EPDXV6T1G SeriesDual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic Biashttp://onsemi.comResistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areSOT-

Другие транзисторы... NSTB1005DXV5 , NSTB60BDW1T1G , NSVB114YPDXV6T1G , NSVB123JPDXV6T1G , NSVB124XPDXV6T1G , NSVB143TPDXV6T1G , NSVB143ZPDXV6T1G , NSVB144EPDXV6T1G , BC639 , NSVBA114EDXV6T1G , NSVBA114YDXV6T1G , NSVBC114EDXV6T1G , NSVBC114EPDXV6T1G , NSVBC114YDXV6T1G , NSVBC124EDXV6T1G , NSV2SA2029M3T5G , NSV2SC5658M3T5G .

History: LBC846ALT1G | 2SC2312 | CMPT930

 

 
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