Справочник транзисторов. NSBC144EPDP6

 

Биполярный транзистор NSBC144EPDP6 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: NSBC144EPDP6
   Маркировка: K
   Тип материала: Si
   Полярность: Pre-Biased-NPN*PNP
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.27 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT963

 Аналоги (замена) для NSBC144EPDP6

 

 

NSBC144EPDP6 Datasheet (PDF)

 ..1. Size:140K  onsemi
nsbc144epdp6.pdf

NSBC144EPDP6 NSBC144EPDP6

MUN5313DW1,SMUN5313DW1,NSBC144EPDXV6,NSBC144EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor R1 R2Transistor (BRT) cont

 4.1. Size:140K  onsemi
nsbc144epdxv6.pdf

NSBC144EPDP6 NSBC144EPDP6

MUN5313DW1,SMUN5313DW1,NSBC144EPDXV6,NSBC144EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor R1 R2Transistor (BRT) cont

 6.1. Size:116K  onsemi
nsbc144ef3.pdf

NSBC144EPDP6 NSBC144EPDP6

MUN2213, MMUN2213L,MUN5213, DTC144EE,DTC144EM3, NSBC144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 6.2. Size:89K  onsemi
nsbc144edxv6.pdf

NSBC144EPDP6 NSBC144EPDP6

MUN5213DW1,NSBC144EDXV6,NSBC144EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 6.3. Size:89K  onsemi
nsbc144edp6.pdf

NSBC144EPDP6 NSBC144EPDP6

MUN5213DW1,NSBC144EDXV6,NSBC144EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 47 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

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