NSBC143EDXV6. Аналоги и основные параметры

Наименование производителя: NSBC143EDXV6

Маркировка: 7J

Тип материала: Si

Полярность: Pre-Biased-NPN

Встроенный резистор цепи смещения R1 = 4.7 kOhm

Встроенный резистор цепи смещения R2 = 4.7 kOhm

Соотношение сопротивлений R1/R2 = 1

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.36 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 15

Корпус транзистора: SOT563

 Аналоги (замена) для NSBC143EDXV6

- подборⓘ биполярного транзистора по параметрам

 

NSBC143EDXV6 даташит

 ..1. Size:146K  onsemi
 nsbc143edxv6.pdf pdf_icon

NSBC143EDXV6

MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor w

 5.1. Size:146K  onsemi
 nsbc143edp6.pdf pdf_icon

NSBC143EDXV6

MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor w

 6.1. Size:158K  onsemi
 nsbc143epdxv6.pdf pdf_icon

NSBC143EDXV6

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a singl

 6.2. Size:158K  onsemi
 nsbc143epdp6.pdf pdf_icon

NSBC143EDXV6

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a singl

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: NSBC124EDXV6, NSBC124EF3, NSBC124EPDP6, NSBC124EPDXV6, NSBC124XDXV6, NSBC124XF3, NSBC124XPDXV6, NSBC143EDP6, BC337, NSBC143EF3, NSBC143EPDP6, NSBC143EPDXV6, NSBC143TDXV6, NSBC143TF3, NSBC143TPDXV6, NSBC143ZDP6, NSBC143ZDXV6