Биполярный транзистор APT17Z - описание производителя. Основные параметры. Даташиты.
Наименование производителя: APT17Z
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 480 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO92
APT17Z Datasheet (PDF)
apt17n apt17z.pdf
Data SheetHIGH VOLTAGE NPN TRANSISTOR APT17General Description FeaturesThe APT17 is high voltage, small signal NPN transis- High Collector-Emitter Voltage: 480Vtor. ApplicationsThe APT17 is available in SOT-23 and TO-92 pack-ages. High Voltage and Low Standby Power Circuit forBCD Solution SOT-23 TO-92(Bulk Packing) TO-92(Ammo Packing)Figure 1. Package Types of APT17
apt17n80bc3g apt17n80sc3g.pdf
APT17N80BC3APT17N80SC3800V 17A 0.290D3PAKSuper Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT17N80BC3_SC
apt17n80sc3.pdf
APT17N80BC3APT17N80SC3800V 17A 0.290D3PAKSuper Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT17N80BC3_SC
apt17n80bc3.pdf
APT17N80BC3APT17N80SC3800V 17A 0.290D3PAKSuper Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT17N80BC3_SC
apt17m120jcu3.pdf
APT17M120JCU3VDSS = 1200V ISOTOP Buck chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott
apt17f120j.pdf
APT17F120J 1200V, 18A, 0.58 Max, trr 330nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig
apt17m120jcu2.pdf
APT17M120JCU2VDSS = 1200V ISOTOP Boost chopper RDSon = 680m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 17A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat
apt17f80b apt17f80s.pdf
APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt17f100b apt17f100s.pdf
APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
apt17f80b.pdf
isc N-Channel MOSFET Transistor APT17F80BFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
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