Справочник транзисторов. SK3434

 

Биполярный транзистор SK3434 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SK3434
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.625 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Граничная частота коэффициента передачи тока (ft): 40 MHz
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: TO92

 Аналоги (замена) для SK3434

 

 

SK3434 Datasheet (PDF)

 ..1. Size:70K  njs
sk3434.pdf

SK3434

 0.1. Size:206K  renesas
2sk3434-s-z-zj.pdf

SK3434
SK3434

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.2. Size:994K  kexin
2sk3434-zj.pdf

SK3434
SK3434

SMD Type MOSFETN-Channel MOSFET2SK3434-ZJ Features VDS S = 60V ID = 48 A (VGS = 10V) RDS(ON) 20m (VGS = 10V) RDS(ON) 31m (VGS = 4V) Low Ciss: Ciss = 2100 pF TYP.DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage

 0.3. Size:283K  inchange semiconductor
2sk3434-s.pdf

SK3434
SK3434

isc N-Channel MOSFET Transistor 2SK3434-SFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 0.4. Size:289K  inchange semiconductor
2sk3434.pdf

SK3434
SK3434

isc N-Channel MOSFET Transistor 2SK3434FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.5. Size:357K  inchange semiconductor
2sk3434-z.pdf

SK3434
SK3434

isc N-Channel MOSFET Transistor 2SK3434-ZFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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