SBC846BLT1G. Аналоги и основные параметры
Наименование производителя: SBC846BLT1G
Маркировка: 1B
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.23 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 150
Корпус транзистора: SOT23
Аналоги (замена) для SBC846BLT1G
- подборⓘ биполярного транзистора по параметрам
SBC846BLT1G даташит
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf
BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements
sbc846bpdw1t1g.pdf
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
sbc846bdw1t1g.pdf
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q
sbc846bwt1g.pdf
BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
Другие транзисторы: SBC808-25LT1G, SBC817-16LT3G, SBC817-25LT1G, SBC817-25LT3G, SBC817-40LT1G, SBC817-40LT3G, SBC846ALT1G, SBC846BDW1T1G, 13003, SBC846BLT3G, SBC846BPDW1T1G, SBC846BPDW1T2G, SBC846BWT1G, SBC847AWT1G, SBC847BDW1T1G, SBC847BDW1T3G, SBC847BLT1G
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