SBC846BWT1G. Аналоги и основные параметры
Наименование производителя: SBC846BWT1G
Маркировка: 1B
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT323
Аналоги (замена) для SBC846BWT1G
- подборⓘ биполярного транзистора по параметрам
SBC846BWT1G даташит
sbc846bwt1g.pdf
BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
sbc846bpdw1t1g.pdf
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap
sbc846bdw1t1g.pdf
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf
BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements
Другие транзисторы: SBC817-40LT1G, SBC817-40LT3G, SBC846ALT1G, SBC846BDW1T1G, SBC846BLT1G, SBC846BLT3G, SBC846BPDW1T1G, SBC846BPDW1T2G, BC327, SBC847AWT1G, SBC847BDW1T1G, SBC847BDW1T3G, SBC847BLT1G, SBC847BPDW1T1G, SBC847BPDW1T3G, SBC847BPDXV6T1G, SBC847BWT1G
History: SBC846BLT3G
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Список транзисторов
Обновления
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