Справочник транзисторов. SBC847CLT1G

 

Биполярный транзистор SBC847CLT1G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SBC847CLT1G
   Маркировка: 1G
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.23 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 270
   Корпус транзистора: SOT23

 Аналоги (замена) для SBC847CLT1G

 

 

SBC847CLT1G Datasheet (PDF)

 ..1. Size:1432K  onsemi
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf

SBC847CLT1G
SBC847CLT1G

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements

 7.1. Size:110K  onsemi
sbc847cdw1t1g.pdf

SBC847CLT1G
SBC847CLT1G

BC846BDW1, BC847BDW1,BC848CDW1Dual General PurposeTransistorsNPN Dualswww.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Features SOT-363CASE 419B S and NSV Prefixes for Automotive and Other ApplicationsSTYLE 1Requiring Unique Site and

 7.2. Size:128K  onsemi
sbc847cdxv6t1g.pdf

SBC847CLT1G
SBC847CLT1G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 7.3. Size:109K  onsemi
sbc847cwt1g.pdf

SBC847CLT1G
SBC847CLT1G

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 7.4. Size:109K  onsemi
sbc847cwt3g.pdf

SBC847CLT1G
SBC847CLT1G

BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC

 7.5. Size:200K  onsemi
bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

SBC847CLT1G
SBC847CLT1G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

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