SBC856BDW1T1G. Аналоги и основные параметры

Наименование производителя: SBC856BDW1T1G

Маркировка: 3B

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.38 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 150

Корпус транзистора: SOT363

 Аналоги (замена) для SBC856BDW1T1G

- подборⓘ биполярного транзистора по параметрам

 

SBC856BDW1T1G даташит

 ..1. Size:156K  onsemi
 bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf pdf_icon

SBC856BDW1T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (3) (2) (1) Features S

 ..2. Size:181K  onsemi
 sbc856bdw1t1g.pdf pdf_icon

SBC856BDW1T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

 3.1. Size:181K  onsemi
 sbc856bdw1t3g.pdf pdf_icon

SBC856BDW1T1G

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices http //onsemi.com Dual General Purpose Transistors PNP Duals SOT-363/SC-88 CASE 419B STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applicat

 7.1. Size:81K  onsemi
 sbc856bwt1g.pdf pdf_icon

SBC856BDW1T1G

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: SBC847BWT1G, SBC847CDW1T1G, SBC847CDXV6T1G, SBC847CLT1G, SBC847CWT1G, SBC847CWT3G, SBC848BLT1G, SBC856ALT1G, TIP127, SBC856BDW1T3G, SBC856BLT1G, SBC856BLT3G, SBC856BWT1G, SBC857ALT1G, SBC857BDW1T1G, SBC857BLT1G, SBC857BWT1G