SBCP53T1G. Аналоги и основные параметры

Наименование производителя: SBCP53T1G

Маркировка: AH

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 1.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 50 MHz

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: SOT223

 Аналоги (замена) для SBCP53T1G

- подборⓘ биполярного транзистора по параметрам

 

SBCP53T1G даташит

 ..1. Size:69K  onsemi
 sbcp53t1g.pdf pdf_icon

SBCP53T1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http //onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow

 8.1. Size:618K  onsemi
 bcp53-16t1g bcp53-16t3g bcp53t1g bcp53-10t1g sbcp53-10t1g sbcp53-16t1g.pdf pdf_icon

SBCP53T1G

BCP53 Series, SBCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package http //onsemi.com which is designed for medium power surface mount applications. MEDIUM POWER HIGH High Current 1.5 A CURRENT SURFACE MOUNT NPN Complement is BCP56 PNP TRANSISTOR

 8.2. Size:71K  onsemi
 bcp53t1g bcp53-16t1g bcp53-10t1g bcp53-16t3g sbcp53-16t1g sbcp53-10t1g sbcp53-10t1g nsvbcp53-16t3g.pdf pdf_icon

SBCP53T1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. www.onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT-223 Package can be soldered using wave or reflow.

 9.1. Size:151K  onsemi
 sbcp56t3g.pdf pdf_icon

SBCP53T1G

BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: SBC857ALT1G, SBC857BDW1T1G, SBC857BLT1G, SBC857BWT1G, SBC857CDW1T1G, SBC857CLT1G, SBCP53-10T1G, SBCP53-16T1G, 2SC2655, SBCP56-10T1G, SBCP56-16T1G, SBCP56-16T3G, SBCP56T1G, SBCP56T3G, SBCP68T1G, SBCW30LT1G, SBCW33LT1G