Биполярный транзистор SBCP56-10T1G Даташит. Аналоги
Наименование производителя: SBCP56-10T1G
Маркировка: BH-10
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 130 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: SOT223
Аналог (замена) для SBCP56-10T1G
SBCP56-10T1G Datasheet (PDF)
sbcp56-10t1g.pdf
BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56-16t3g.pdf
BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56-16t1g.pdf
BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56t3g.pdf
BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
Другие транзисторы... SBC857BDW1T1G , SBC857BLT1G , SBC857BWT1G , SBC857CDW1T1G , SBC857CLT1G , SBCP53-10T1G , SBCP53-16T1G , SBCP53T1G , 2SD669A , SBCP56-16T1G , SBCP56-16T3G , SBCP56T1G , SBCP56T3G , SBCP68T1G , SBCW30LT1G , SBCW33LT1G , SBCW66GLT1G .
History: BC807-25W-AU | 2SD1241 | 2SA1772 | GF180 | BTB1216J3 | DTC015TM | 2SD1343
History: BC807-25W-AU | 2SD1241 | 2SA1772 | GF180 | BTB1216J3 | DTC015TM | 2SD1343
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