Биполярный транзистор SBCP56T1G Даташит. Аналоги
Наименование производителя: SBCP56T1G
Маркировка: BH
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 130 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: SOT223
Аналог (замена) для SBCP56T1G
SBCP56T1G Datasheet (PDF)
sbcp56t1g.pdf

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56t3g.pdf

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56-16t3g.pdf

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
sbcp56-16t1g.pdf

BCP56 Series,SBCP56 SeriesNPN SiliconEpitaxial TransistorThese NPN Silicon Epitaxial transistors are designed for use inaudio amplifier applications. The device is housed in the SOT-223 http://onsemi.compackage, which is designed for medium power surface mountapplications.MEDIUM POWER NPN SILICONFeaturesHIGH CURRENT TRANSISTOR High Current: 1.0 ASURFACE MOUNT The
Другие транзисторы... SBC857CDW1T1G , SBC857CLT1G , SBCP53-10T1G , SBCP53-16T1G , SBCP53T1G , SBCP56-10T1G , SBCP56-16T1G , SBCP56-16T3G , D880 , SBCP56T3G , SBCP68T1G , SBCW30LT1G , SBCW33LT1G , SBCW66GLT1G , SBCW72LT1G , SBCX19LT1G , SBF13007-O .
History: KSC2223R | MG100H2DL1 | HEPS0020 | RN2426 | IR413 | BC817S | STC2073L
History: KSC2223R | MG100H2DL1 | HEPS0020 | RN2426 | IR413 | BC817S | STC2073L



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