SBN13002D. Аналоги и основные параметры

Наименование производителя: SBN13002D

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 12 W

Макcимально допустимое напряжение коллектор-база (Ucb): 600 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V

Макcимальный постоянный ток коллектора (Ic): 1.25 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 9

Корпус транзистора: TO92

 Аналоги (замена) для SBN13002D

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SBN13002D даташит

 ..1. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13002D

SBN13002D SBN13002D SBN13002D SBN13002D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol 2.Collector Very High Switching Speed High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter Built -in freewheeling diode General Description This Device is designed for high voltage, high speed switching characteristics required suc

 6.1. Size:170K  semiwell
 sbn13002.pdf pdf_icon

SBN13002D

SemiWell Semiconductor SBN13002 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed switching General Description TO-92 This device is designed high voltage and high speed switching characteristic required to lighting system, switching Regulator and inverter motor controls. Absolute Maximum Ratings (TJ = 25 unless otherwise specif

 7.1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13002D

SBN13003HB High Voltage Fast Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value

 7.2. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13002D

SBN13002D SBN13002D SBN13002D SBN13002D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol 2.Collector Very High Switching Speed High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter Built -in freewheeling diode General Description This Device is designed for high voltage, high speed switching characteristics required suc

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: SBCW66GLT1G, SBCW72LT1G, SBCX19LT1G, SBF13007-O, SBF13009-O, SBF720T1G, SBN13001, SBN13002, 2SC2383, SBN13003A, SBN13003A1, SBN13003HB, SBR13003A, SBR13003B, SBR13003B1, SBR13003BD, SBR13003D