Справочник транзисторов. SBN13003A

 

Биполярный транзистор SBN13003A Даташит. Аналоги


   Наименование производителя: SBN13003A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 18 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO92
 

 Аналог (замена) для SBN13003A

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SBN13003A Datasheet (PDF)

 ..1. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13003A

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 0.1. Size:406K  winsemi
 sbn13003a1.pdf pdf_icon

SBN13003A

SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 6.1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13003A

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 7.1. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13003A

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

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Другие транзисторы... SBCW72LT1G , SBCX19LT1G , SBF13007-O , SBF13009-O , SBF720T1G , SBN13001 , SBN13002 , SBN13002D , D667 , SBN13003A1 , SBN13003HB , SBR13003A , SBR13003B , SBR13003B1 , SBR13003BD , SBR13003D , SBR13003H .

History: DJT4031N | MJH11022 | KSD5740 | 2SC3356W | SBN13001 | 2SD668B | INA6002AC1

 

 
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