Справочник транзисторов. SBN13003A

 

Биполярный транзистор SBN13003A Даташит. Аналоги


   Наименование производителя: SBN13003A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 18 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO92
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SBN13003A Datasheet (PDF)

 ..1. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13003A

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 0.1. Size:406K  winsemi
 sbn13003a1.pdf pdf_icon

SBN13003A

SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 6.1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13003A

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 7.1. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13003A

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

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Другие транзисторы... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: CD77-2 | BD421 | BCY77-8 | TRF644 | SD451 | UMB6N | KSP42

 

 
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