Справочник транзисторов. SBN13003HB

 

Биполярный транзистор SBN13003HB - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SBN13003HB
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 850 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 530 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 6
   Корпус транзистора: TO92

 Аналоги (замена) для SBN13003HB

 

 

SBN13003HB Datasheet (PDF)

 ..1. Size:147K  winsemi
sbn13003hb.pdf

SBN13003HB
SBN13003HB

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 6.1. Size:273K  winsemi
sbn13003a.pdf

SBN13003HB
SBN13003HB

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 6.2. Size:406K  winsemi
sbn13003a1.pdf

SBN13003HB
SBN13003HB

SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 7.1. Size:273K  winsemi
sbn13002d.pdf

SBN13003HB
SBN13003HB

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 7.2. Size:323K  winsemi
sbn13001.pdf

SBN13003HB
SBN13003HB

SBN13001SBN13001SBN13001SBN13001High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter T

 7.3. Size:170K  semiwell
sbn13002.pdf

SBN13003HB
SBN13003HB

SemiWell Semiconductor SBN13002 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed switching General Description TO-92This device is designed high voltage and high speed switching characteristic required to lighting system, switching Regulator and inverter motor controls. Absolute Maximum Ratings (TJ = 25 unless otherwise specif

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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