Справочник транзисторов. SBN13003HB

 

Биполярный транзистор SBN13003HB Даташит. Аналоги


   Наименование производителя: SBN13003HB
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 850 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 530 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 6
   Корпус транзистора: TO92
 

 Аналог (замена) для SBN13003HB

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SBN13003HB Datasheet (PDF)

 ..1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13003HB

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 6.1. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13003HB

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 6.2. Size:406K  winsemi
 sbn13003a1.pdf pdf_icon

SBN13003HB

SBN13003A1SBN13003A1SBN13003A1SBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 7.1. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13003HB

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

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Другие транзисторы... SBF13007-O , SBF13009-O , SBF720T1G , SBN13001 , SBN13002 , SBN13002D , SBN13003A , SBN13003A1 , 2SC2482 , SBR13003A , SBR13003B , SBR13003B1 , SBR13003BD , SBR13003D , SBR13003H , SBSP52T1G , SD1127 .

History: 2SB354 | TMPC1623L5 | 2SD1274B | SDM5016 | MJE5740 | 2SC1376H

 

 
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