Справочник транзисторов. SBR13003BD

 

Биполярный транзистор SBR13003BD - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: SBR13003BD
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO126

 Аналоги (замена) для SBR13003BD

 

 

SBR13003BD Datasheet (PDF)

 ..1. Size:281K  winsemi
sbr13003bd.pdf

SBR13003BD
SBR13003BD

SBR13003BDSBR13003BDSBR13003BDSBR13003BDHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol Very High Switching Speed2.Collector High Voltage Capability1.Base Wide Reverse Bias SOA3.EmitterGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switchin

 5.1. Size:406K  winsemi
sbr13003b.pdf

SBR13003BD
SBR13003BD

SBR13003BSBR13003BSBR13003BSBR13003BHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Paramet

 5.2. Size:327K  winsemi
sbr13003b1.pdf

SBR13003BD
SBR13003BD

SBR13003B1SBR13003B1SBR13003B1SBR13003B1High Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionG

 6.1. Size:354K  winsemi
sbr13003d.pdf

SBR13003BD
SBR13003BD

SBR13003DSBR13003DSBR13003DSBR13003DHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorHigh Voltage Fast-Switching NPN Power TransistorFeaturesFeaturesFeaturesFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling

 6.2. Size:202K  winsemi
sbr13003h.pdf

SBR13003BD
SBR13003BD

SBR13003HHigh Voltage FastSwitching NPNPower Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value U

 6.3. Size:460K  semiwell
sbr13003a.pdf

SBR13003BD
SBR13003BD

SBR13003ASemiWell SemiconductorHigh Voltage Fast-Switching NPN Power TransistorFeaturesSymbol2.Collector Very High Switching Speed (Typical 120ns@1.0A) Minimum Lot-to-Lot hFE Variation1.Base Low VCE(sat) (Typical 200mV@1.0A/0.25A) Wide Reverse Bias S.O.A3.EmitterGeneral DescriptionTO-126This devices is designed for high voltage, high speed s

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