SD1422. Аналоги и основные параметры
Наименование производителя: SD1422
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 16 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 4.8 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 470 MHz
Ёмкость коллекторного перехода (Cc): 70 pf
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: SOT119
Аналоги (замена) для SD1422
- подборⓘ биполярного транзистора по параметрам
SD1422 даташит
..1. Size:784K hgsemi
sd1422.pdf 
HG RF POWER TRANSISTOR SD1422 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com HG RF POWER TRANSISTOR SD1422 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998
9.1. Size:50K st
sd1420.pdf 
SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS .860 - 960 MHz .24 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P 2.1 W MIN. WITH 9.0 dB GAIN = OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1420 SD1420 PIN CONNECTION DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high
9.2. Size:49K st
sd1424.pdf 
SD1424 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS .800 - 900 MHz .24 VOLTS .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .CLASS AB LINEAR OPERATION .P 30 W MIN. WITH 7.5 dB GAIN OUT = .250 x .320 4LFL (M156) epoxy sealed ORDER CODE BRANDING SD1424 SD1424 PIN CONNECTION DESCRIPTION The SD1424 is a gold metallized epitaxial silicon NPN planar
9.3. Size:54K st
sd1423.pdf 
SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS .800 - 960 MHz .24 VOLTS .EFFICIENCY 50% .COMMON EMITTER .GOLD METALLIZATION .CLASS AB LINEAR OPERATION .P 15 W MIN. WITH 8.0 dB GAIN OUT = .230 6LFL (M118) epoxy sealed ORDE R CODE BRANDING SD1423 SD1423 DESCRIPTION PIN CONNECTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor
9.4. Size:49K toshiba
2sd1429.pdf 
This Material Copyrighted By Its Respective Manufacturer
9.5. Size:116K toshiba
2sd1428.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.6. Size:37K panasonic
2sd1424.pdf 
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
9.7. Size:41K panasonic
2sd1423 e.pdf 
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
9.8. Size:41K panasonic
2sd1424 e.pdf 
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
9.9. Size:37K panasonic
2sd1423.pdf 
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
9.10. Size:30K hitachi
2sd1420.pdf 
2SD1420 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1420 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
9.11. Size:30K hitachi
2sd1421.pdf 
2SD1421 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1421 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
9.14. Size:241K cdil
csd1426f.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN HIGH VOLTAGE SILICON POWER TRANSISTORS CSD1426F TO-3P Fully Isolated Plastic Package B C E Colour TV Horizontal Output Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCE
9.15. Size:881K kexin
2sd1420.pdf 
SMD Type Transistors NPN Transistors 2SD1420 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage
9.16. Size:897K kexin
2sd1421.pdf 
SMD Type Transistors NPN Transistors 2SD1421 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage
9.17. Size:261K hgsemi
sd1420.pdf 
HG RF POWER TRANSISTOR SD1420 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .860 - 960 MHz .24 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P 2.1 W MIN. WITH 9.0 dB GAIN = OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1420 SD1420 PIN CONNECTION DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar trans
9.18. Size:256K hgsemi
sd1429.pdf 
HG RF POWER TRANSISTOR SD1429 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S The SD1429 is a 12.5 V Class C epitaxial silicon NPN planar 470 MHz transistor designed primarily for UHF communic
9.19. Size:191K inchange semiconductor
2sd1429.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1429 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.20. Size:215K inchange semiconductor
2sd1427.pdf 
isc Silicon NPN Power Transistor 2SD1427 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
9.21. Size:215K inchange semiconductor
2sd1426.pdf 
isc Silicon NPN Power Transistor 2SD1426 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU
9.22. Size:189K inchange semiconductor
2sd1428.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1428 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
9.23. Size:189K inchange semiconductor
2sd1425.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1425 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
Другие транзисторы: SD1274, SD1274-01, SD1275, SD1275-01, SD1285, SD1405, SD1407, SD1420, 2SC4793, SD1429, SD1434, SD1439, SD1446, SD1448, SD1455, SD1458, SD1459
