SD1439. Аналоги и основные параметры
Наименование производителя: SD1439
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 8.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 24 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3.5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 860 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: SOT122
Аналоги (замена) для SD1439
- подборⓘ биполярного транзистора по параметрам
SD1439 даташит
..1. Size:36K st
sd1439.pdf 
SD1439 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P = 0.5 W MIN. WITH 9.5 dB GAIN OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1439 TCC596 PIN CONNECTION DESCRIPTION The SD1439 is a silicon NPN bipolar device spe- cifically designed for high linearity applications in the UHF frequen
0.1. Size:100K panasonic
2sd1439.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.2. Size:215K inchange semiconductor
2sd1439.pdf 
isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION High Voltage High Switching Speed Built-in damper diode Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNI
9.1. Size:441K st
sd1433.pdf 
SD1433 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT = 10 W MIN. WITH 8.0 dB GAIN DESCRIPTION .280 4L STUD (M122) The SD1433 is a Class C epitaxial silicon NPN pla- epoxy sealed nar transistor designed for driver applications in the 450 - 512 MHz fre
9.2. Size:34K st
sd1437.pdf 
SD1437 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P = 2 W MIN. WITH 8.5 dB GAIN OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1437 TCC593 PIN CONNECTION DESCRIPTION The SD1437 is a silicon NPN bipolar device spe- cifically designed for high linearity applications in the UHF frequen
9.3. Size:73K st
sd1434.pdf 
SD1434 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .470 MHz .12.5 VOLTS .COMMON EMITTER .P 45 W MIN. WITH 5.0 dB GAIN = OUT .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING SD1434 SD1434 PIN CONNECTION DESCRIPTION The SD1434 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emit- 1. Coll
9.4. Size:100K toshiba
2sd1438.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.5. Size:49K toshiba
2sd1430.pdf 
This Material Copyrighted By Its Respective Manufacturer
9.8. Size:34K hitachi
2sd1436.pdf 
2SD1436(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1.5 k 130 (Typ) (Typ) 1 3 2 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VE
9.9. Size:69K wingshing
2sd1437.pdf 
2SD1437 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB1033 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 40 W Juncti
9.10. Size:28K wingshing
2sd1432.pdf 
NPN TRIPLE DIFFUSED 2SD1432 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC
9.11. Size:28K wingshing
2sd1431.pdf 
NPN TRIPLE DIFFUSED 2SD1431 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC
9.12. Size:27K wingshing
2sd1433.pdf 
NPN TRIPLE DIFFUSED 2SD1433 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16D3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current (DC) I
9.13. Size:209K inchange semiconductor
2sd1437.pdf 
isc Silicon NPN Power Transistor 2SD1437 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min) (BR)CEO Complement to Type 2SB1033 Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.14. Size:191K inchange semiconductor
2sd1430.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1430 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.15. Size:190K inchange semiconductor
2sd1432.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1432 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.16. Size:89K inchange semiconductor
2sd1435.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION With TO-3PN package DARLINGTON High DC current gain Complement to type 2SB1031 APPLICATIONS For low frequency power amplifier and high current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline
9.17. Size:216K inchange semiconductor
2sd1436.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1436 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 5A, V = 3V FE C CE Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1032 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATI
9.18. Size:215K inchange semiconductor
2sd1431.pdf 
isc Silicon NPN Power Transistor 2SD1431 DESCRIPTION High Speed t = 1.0 us(MIN) @ I = 4A , I = 0.8A f C B(end) High Voltage V =1300V CBO Low Saturation Voltage V
9.19. Size:190K inchange semiconductor
2sd1433.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1433 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Другие транзисторы: SD1275-01, SD1285, SD1405, SD1407, SD1420, SD1422, SD1429, SD1434, BD335, SD1446, SD1448, SD1455, SD1458, SD1459, SD1460, SD1462, SD1480
