SD1448 - описание и поиск аналогов

 ..1. Size:71K  st
 sd1448.pdf 

SD1448 (TCC598) RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .25 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P 4.0 W MIN. WITH 7.0 dB GAIN = OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1448 TCC598 PIN CONNECTION DESCRIPTION The SD1448 is a silicon NPN bipolar device spe- cifically designed for high linearity application

 ..2. Size:328K  hgsemi
 sd1448.pdf 

SD1448 (TCC598) SD1448 RF & MICROWAVE TRANSISTORS Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR UHF TV/LINEAR APPLICATIONS .860 MHz .25 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P = 4.0 W MIN. WITH 7.0 dB GAIN OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1448 TCC598 PIN CONNECTION DESCRIPTION The SD1448 is a silicon

 9.1. Size:230K  1
 2sd1449.pdf 

/ e c d n cle stage. e a u n n i e t t n n i o a c s maintenance type planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d n cle stage. e a u n n i e t t n n i o

 9.2. Size:386K  st
 sd1446.pdf 

SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION .380 4L FL (M113) The SD1446 is a 12.5 V Class C epitaxial silicon epoxy sealed NPN planar transistor designed primarily for land mobile transmitt

 9.3. Size:106K  st
 sd1449.pdf 

SD1449 (TCC597) RF & MICROWAVE TRANSISTORS UHF TV LINEAR APPLICATIONS .860 MHz .20 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P 1.0 W MIN. WITH 10.0 dB GAIN = OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1449 TCC597 PIN CONNECTION DESCRIPTION The SD1449 is a silicon NPN bipolar device spe- cifically designed for high linearity applicatio

 9.4. Size:102K  panasonic
 2sd1440.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.5. Size:63K  panasonic
 2sd1446.pdf 

Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features 3.1 0.1 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C

 9.6. Size:102K  panasonic
 2sd1441.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 9.7. Size:235K  isahaya
 isd1447as1.pdf 

SMALL-SIGNAL TRANSISTOR ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 High collector current. ICM= 1.5A High

 9.8. Size:26K  advanced-semi
 sd1441.pdf 

SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG C A 1 3 FEATURES 2x N FULL R 175 MHz 12.5 V D PG = 5.0 dB at 150 W/175 MHz 4 2 Omnigold Metalization System B E .725/18,42 Common

 9.9. Size:75K  jmnic
 2sd1441.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION With TO-3PN package Built-in damper diode High voltage ,high reliability High speed switching Wide area of safe operation APPLICATIONS For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1

 9.10. Size:276K  hgsemi
 sd1446.pdf 

HG RF POWER TRANSISTOR SD1446 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR D DESCRIPTION 1.Collector A 2.EMITTER F The SD1446 is a 12.5 V Class C epitaxial 3.BASE q C silicon NPN planar transistor designed primarily 4.EMITTER U1 B 5.FIN for land mobile transmitter applications. This device utilizes emitter ballasting and is w2 M C c extremely stable and

 9.11. Size:209K  inchange semiconductor
 2sd1445.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1445 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 10A CE(sat) C Collector-Emitter Breakdown Voltage- V = 20V (Min) (BR)CEO Fast Switching Speed Complement to Type 2SB948 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power ampl

 9.12. Size:126K  inchange semiconductor
 2sd1444 2sd1444a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching High collector current Complement to type 2SB953/953A APPLICATIONS Power amplifiers Low voltage switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (

 9.13. Size:215K  inchange semiconductor
 2sd1440.pdf 

isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

 9.14. Size:167K  inchange semiconductor
 2sd1445 2sd1445a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION With TO-220Fa package Complement to type 2SB948/948A High speed switching Low collector saturation voltage APPLICATIONS For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Ab

 9.15. Size:180K  inchange semiconductor
 2sd144.pdf 

 9.16. Size:202K  inchange semiconductor
 2sd1446.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 500(Min) @ I = 2A, V = 2V FE C CE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance

 9.17. Size:216K  inchange semiconductor
 2sd1444.pdf 

isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 20V (Min) (BR)CEO Complement to Type 2SB956 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

 9.18. Size:214K  inchange semiconductor
 2sd1441.pdf 

isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba