Справочник транзисторов. MPS751G

 

Биполярный транзистор MPS751G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MPS751G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.63 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 75 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO92

 Аналоги (замена) для MPS751G

 

 

MPS751G Datasheet (PDF)

 ..1. Size:106K  onsemi
mps751g.pdf

MPS751G
MPS751G

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

 8.1. Size:25K  fairchild semi
mps751.pdf

MPS751G
MPS751G

MPS751Silicon PNP Transistor (Note 1) Low Saturation VoltageTO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current (DC) 2 APC Collector Dissipation (Ta=25C) (Note 2, 3) 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature - 55 ~ 150 C

 8.2. Size:57K  central
mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf

MPS751G

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.3. Size:68K  onsemi
mps650 mps651 mps750 mps751.pdf

MPS751G
MPS751G

NPN - MPS650, MPS651;PNP - MPS750, MPS751MPS651 and MPS751 are Preferred DevicesAmplifier TransistorsFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60

 8.4. Size:106K  onsemi
mps751rlrag.pdf

MPS751G
MPS751G

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

 8.5. Size:114K  onsemi
mps751.pdf

MPS751G
MPS751G

MPS751Silicon PNP Transistor (Note 1) Low Saturation VoltageTO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current (DC) 2 APC Collector Dissipation (Ta=25C) (Note 2, 3) 625 mWTJ Junction Temperature 150 CTSTG Storage Temperature - 55 ~ 150 C

 8.6. Size:106K  onsemi
mps751rlrpg.pdf

MPS751G
MPS751G

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

 8.7. Size:106K  onsemi
mps751zl1g.pdf

MPS751G
MPS751G

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V

 8.8. Size:364K  kec
mps751.pdf

MPS751G
MPS751G

SEMICONDUCTOR MPS751TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=-60V(Min.). High Current : IC(Max.)=-1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAXWide Area of Safe Operation. GC 3.70 MAXDComplementary to MPS651.D 0.45E 1.00F 1.27

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 40616

 

 
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