Справочник транзисторов. MPSA56RLRAG

 

Биполярный транзистор MPSA56RLRAG - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MPSA56RLRAG
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.63 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO92

 Аналоги (замена) для MPSA56RLRAG

 

 

MPSA56RLRAG Datasheet (PDF)

 ..1. Size:89K  onsemi
mpsa56rlrag.pdf

MPSA56RLRAG
MPSA56RLRAG

NPN - MPSA05, MPSA06*;PNP - MPSA55, MPSA56**Preferred DevicesAmplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS 2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1 1MPSA05, MPSA55 60EMITTER EMITTERMPSA06, MPSA56 8

 5.1. Size:89K  onsemi
mpsa56rlrpg.pdf

MPSA56RLRAG
MPSA56RLRAG

NPN - MPSA05, MPSA06*;PNP - MPSA55, MPSA56**Preferred DevicesAmplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS 2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1 1MPSA05, MPSA55 60EMITTER EMITTERMPSA06, MPSA56 8

 5.2. Size:89K  onsemi
mpsa56rlrmg.pdf

MPSA56RLRAG
MPSA56RLRAG

NPN - MPSA05, MPSA06*;PNP - MPSA55, MPSA56**Preferred DevicesAmplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS 2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1 1MPSA05, MPSA55 60EMITTER EMITTERMPSA06, MPSA56 8

 8.1. Size:239K  motorola
mpsa05-06 mpsa55-56 mpsa05 mpsa55 mpsa06 mpsa56.pdf

MPSA56RLRAG
MPSA56RLRAG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA05/DAmplifier TransistorsNPNCOLLECTOR COLLECTOR MPSA053 3MPSA06*2 2PNPBASE BASENPN PNP MPSA551 1*MPSA56EMITTER EMITTERVoltage and current are negativeMAXIMUM RATINGS for PNP transistorsMPSA05 MPSA06MPSA55 MPSA56Rating Symbol Unit*Motorola Preferred DeviceCollectorEmitter Voltage VC

 8.2. Size:47K  philips
mpsa56 4.pdf

MPSA56RLRAG
MPSA56RLRAG

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA56PNP general purpose transistor1999 Apr 27Product specificationSupersedes data of 1998 Jul 21Philips Semiconductors Product specificationPNP general purpose transistor MPSA56FEATURES PINNING Low current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 80 V).1 collector2 baseAPPLICATIONS3 emitter

 8.3. Size:1073K  fairchild semi
mpsa56 mmbta56 pzta56.pdf

MPSA56RLRAG
MPSA56RLRAG

February 2006MPSA56/MMBTA56/PZTA56 PNP General Purpose AmplifierDescriptionThis device is designed for general purpose amplifierapplications at collector currents to 300mA. Sourcedfrom Process 73Absolute Maximum Ratings*TA = 25C unless otherwise specified.Parameter Symbol Value UnitCollector-Emitter Voltage VCES -80 VCollector-Base Voltage VCBO -80 VEmitter-Base Voltag

 8.4. Size:27K  vishay
mpsa56.pdf

MPSA56RLRAG
MPSA56RLRAG

MPSA56New Product Vishay Semiconductorsformerly General SemiconductorSmall Signal Transistor (PNP)TO-226AA (TO-92)Features0.142 (3.6)0.181 (4.6) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the NPN transistorMPSA06 is recommended. On special request, this transistor is also manufactured in the pin con

 8.5. Size:212K  mcc
mpsa55 mpsa56 to-92.pdf

MPSA56RLRAG
MPSA56RLRAG

MCCMPSA55Micro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMPSA56CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 1.5Watts of Power Dissipation.PNP Silicon Collector-current 500mA Collector-base Voltage 80VAmplifier Transistor Operating and storage junction temperature range: -55OC to +150OC

 8.6. Size:89K  onsemi
mpsa05 mpsa06 mpsa55 mpsa56.pdf

MPSA56RLRAG
MPSA56RLRAG

NPN - MPSA05, MPSA06*;PNP - MPSA55, MPSA56**Preferred DevicesAmplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS 2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1 1MPSA05, MPSA55 60EMITTER EMITTERMPSA06, MPSA56 8

 8.7. Size:89K  onsemi
mpsa56g.pdf

MPSA56RLRAG
MPSA56RLRAG

NPN - MPSA05, MPSA06*;PNP - MPSA55, MPSA56**Preferred DevicesAmplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS 2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1 1MPSA05, MPSA55 60EMITTER EMITTERMPSA06, MPSA56 8

 8.8. Size:89K  onsemi
mpsa56zl1g.pdf

MPSA56RLRAG
MPSA56RLRAG

NPN - MPSA05, MPSA06*;PNP - MPSA55, MPSA56**Preferred DevicesAmplifier TransistorsVoltage and Current are Negativefor PNP Transistorshttp://onsemi.comFeaturesNPN PNP Pb-Free Packages are Available*COLLECTOR COLLECTOR3 3MAXIMUM RATINGS 2 2BASE BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1 1MPSA05, MPSA55 60EMITTER EMITTERMPSA06, MPSA56 8

 8.9. Size:205K  utc
mpsa56.pdf

MPSA56RLRAG
MPSA56RLRAG

UNISONIC TECHNOLOGIES CO., LTD MPSA56 PNP SILICON TRANSISTOR PNP MPSA56 FEATURES * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=625mW 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3MPSA56L-T92-B MPSA56G-T92-B TO-92 E B C Tape BoxMPSA56L-T92-K MPSA56G-T92-K TO-92 E B C Bulkwww.unisonic.com.t

 8.10. Size:61K  secos
mpsa56.pdf

MPSA56RLRAG

MPSA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. ADBE CF G HCollector 1Emitter 111222 3 2Base 3Collector 333J2 Millimeter Millimeter REF. REF. Min. Max. Min. Max. Ba

 8.11. Size:601K  jiangsu
mpsa56.pdf

MPSA56RLRAG
MPSA56RLRAG

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA56 TRANSISTOR (PNP) 1.EMITTER FEATURES 2.BASE General Purpose Switching and Amplification. 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-B

 8.12. Size:26K  kec
mpsa56.pdf

MPSA56RLRAG

SEMICONDUCTOR MPSA56TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATIONS. B CFEATURESComplementary to MPSA06.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNIT F 1.27G 0.85H 0.45VCBO -80 VCollector-Base Voltage_HJ 14.00 + 0.50K 0.55 MAXF FVCE

 8.13. Size:231K  first silicon
mpsa56.pdf

MPSA56RLRAG
MPSA56RLRAG

SEMICONDUCTORMPSA56TECHNICAL DATAMPSA56 TRANSISTOR (PNP) B CFEATURES General Purpose Switching and Amplification. DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAX DD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Unit _HJ 14.00 0.50+L 2.30VCBO Collector-Base Voltage -80 V F FM 0.51 MA

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