MRF2628 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2628/D The RF Line NPN Silicon MRF2628 RF Power Transistor . . . designed for 12.5 volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact .280 Stud Package Specified 12.5 V, 175 MHz Performance 15 W 136 220 MHz Output Power = 15 Watts RF POWER Power Gain = 12 dB Min TRA

HG RF POWER TRANSISTOR MRF2628 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact .280 Stud Package Specified 12.5 V, 175 MHz Performance Output Power = 15 Watts Power Gain = 12 dB Min Efficiency = 60% Min Characterized to 220 MHz Load Mismatch

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2628/D The RF Line NPN Silicon MRF2628 RF Power Transistor . . . designed for 12.5 volt VHF large signal power amplifiers in commercial and industrial FM equipment. Compact .280 Stud Package Specified 12.5 V, 175 MHz Performance 15 W 136 220 MHz Output Power = 15 Watts RF POWER Power Gain = 12 dB Min TRA

ELEFLOW TECHNOLOGIES MRF261 www.eleflow.com High band/VHF FM power transistor MRF261 Description MRF261 is designed as 10W, 5.2dB, 12.5V, 136-175MHz, TO220 high band/VHF FM transistors. Maximum Ratings at TU = 25 Symbol Test Conditions Characteristics Units V BVCES IC=10 mA Max. 36 V BVCEO IC=30 mA Max. 18 V BVEBO IE=5 mA Max. 4 A IC Max. 2 W Ptot Max. 30

ELEFLOW TECHNOLOGIES MRF264 www.eleflow.com High band/VHF FM power transistor MRF264 Description MRF264 is designed for class C VHF mobile radio power amplifier applications operating at 12.5V. Maximum Ratings at TU = 25 Symbol Test Conditions Characteristics Units V BVCES IC=10 mA Max. 36 V BVCEO IC=30 mA Max. 18 V BVEBO IE=5 mA Max. 4 A IC Max. 6 W Ptot Max.