HG RF POWER TRANSISTORMRF314ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .380 4L FLGThe MRF314A is Designed for .112 x 45BAFEATURES: .125 NOM.FULL RJ.125 Omnigold Metalization System C D E MAXIMUM RATINGSFIHGIC 9.0 A MINIMUM MAXIMUMVCBO 65 VDIMinches / mm inches / mm.220 / 5

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF314/DThe RF LineNPN SiliconMRF314RF Power Transistors. . . designed primarily for wideband largesignal driver and output amplifierstages in the 30200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 VdcOutput Power = 30 Watts30 W, 30200 MHzMinimum Gain = 10 dBRF POWER 100% Tested

MRF314 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 30W, 30-200MHz, 28V Designed primarily for wideband largesignal driver and output Product Image amplifier stages in the 30200 MHz frequency range. Guaranteed performance at 150 MHz, 28 Vdc Output power = 30 W Minimum gain = 10 dB 100% tested for load mismatch at all ph