MRF314A - Даташиты. Аналоги. Основные параметры

HG RF POWER TRANSISTOR MRF314A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L FLG The MRF314A is Designed for .112 x 45 B A FEATURES .125 NOM. FULL R J .125 Omnigold Metalization System C D E MAXIMUM RATINGS F I H G IC 9.0 A MINIMUM MAXIMUM VCBO 65 V DIM inches / mm inches / mm .220 / 5

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested

MRF314 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 30W, 30-200MHz, 28V Designed primarily for wideband large signal driver and output Product Image amplifier stages in the 30 200 MHz frequency range. Guaranteed performance at 150 MHz, 28 Vdc Output power = 30 W Minimum gain = 10 dB 100% tested for load mismatch at all ph