MRF427A datasheet и подбор замены

 ..1. Size:73K  eleflow
 mrf427a.pdf 

ELEFLOW TECHNOLOGIES MRF427/MRF427A www.eleflow.com NPN Silicon RF power transistor MRF427 / MRF427A Description MRF427/MRF427A is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30MHz. Idea for marine and base station equipment. Features Specified 50 Volt, 30 MHz Characteristics Output Power = 25 W (PEP), Minimum Gain = 18 dB

 9.1. Size:102K  motorola
 mrf421rev1.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo

 9.2. Size:97K  motorola
 mrf422.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF422/D The RF Line NPN Silicon MRF422 RF Power Transistor Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermod

 9.3. Size:112K  motorola
 mrf426re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF426/D The RF Line NPN Silicon MRF426 RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP) 25 W (PEP), 30 MHz Minimum Gain = 22 dB RF POWER Efficiency = 35% TRANSISTOR

 9.4. Size:112K  motorola
 mrf426.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF426/D The RF Line NPN Silicon MRF426 RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP) 25 W (PEP), 30 MHz Minimum Gain = 22 dB RF POWER Efficiency = 35% TRANSISTOR

 9.5. Size:99K  motorola
 mrf421re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo

 9.6. Size:97K  motorola
 mrf422re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF422/D The RF Line NPN Silicon MRF422 RF Power Transistor Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermod

 9.7. Size:141K  motorola
 mrf429.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF429/D The RF Line NPN Silicon MRF429 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (LINEAR), 30 MHz Minimum Gain

 9.8. Size:141K  motorola
 mrf429re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF429/D The RF Line NPN Silicon MRF429 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (LINEAR), 30 MHz Minimum Gain

 9.9. Size:99K  motorola
 mrf421.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo

 9.10. Size:230K  macom
 mrf422.pdf 

MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a high power linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 150 W (PEP)

 9.11. Size:267K  macom
 mrf426.pdf 

MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. Specified 28 V, 30 MHz characteristics Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% Intermodulation distortion @ 2

 9.12. Size:26K  eleflow
 mrf429.pdf 

ELEFLOW TECHNOLOGIES MRF429 www.eleflow.com NPN Silicon RF power transistor MRF429 Description MRF429 is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% M