MRF652S - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF652/D The RF Line NPN Silicon MRF652 RF Power Transistors MRF652S Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts 5.0 W, 512 MHz Minimum Gain = 10 dB RF POWER Ef

HG RF POWER TRANSISTOR MRF652S Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF652/D The RF Line NPN Silicon MRF652 RF Power Transistors MRF652S Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts 5.0 W, 512 MHz Minimum Gain = 10 dB RF POWER Ef

HG RF POWER TRANSISTOR MRF652 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Vdc UHF large signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics Output Power = 5.0 Watts Minimum Gain = 10 dB Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF654/D The RF Line NPN Silicon MRF654 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W 15 W, 470 MHz Minimum Gain = 7.8 dB RF POWER Efficiency =

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF654/D The RF Line NPN Silicon MRF654 RF Power Transistor . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W 15 W, 470 MHz Minimum Gain = 7.8 dB RF POWER Efficiency =

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF658/D The RF Line NPN Silicon MRF658 RF Power Transistor Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB 65 W, 512 M

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF650/D The RF Line NPN Silicon MRF650 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts 50 W, 512 MHz Minimum Gain = 5.2 dB @ 440, 470 MHz

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistor Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency = 65% (Ty

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF653/D The RF Line NPN Silicon MRF653 RF Power Transistors MRF653S Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W 10 W, 512 MHz Gain = 8.0 dB (Typ) RF POWER Efficiency

HG RF POWER TRANSISTOR MRF658 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal, common emitter, class C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50% Characterized

HG RF POWER TRANSISTOR MRF650 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB

HG RF POWER TRANSISTOR MRF654 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55% Built In Matching Network for Broadband Operat

HG RF POWER TRANSISTOR MRF653 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65% (Typ) Gold Metallized, Emitter Ballasted for Long Life a