MRF891 datasheet, аналоги, основные параметры
Наименование производителя: MRF891 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 18 W
Макcимально допустимое напряжение коллектор-база (Ucb): 55 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 960 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: 319-07
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Аналоги (замена) для MRF891
- подборⓘ биполярного транзистора по параметрам
MRF891 даташит
..1. Size:116K motorola
mrf891 mrf891s.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF891/D The RF Line NPN Silicon MRF891 RF Power Transistors MRF891S . . . designed for 24 volt UHF large signal, common emitter amplifier applica- tions in industrial and commercial FM equipment operating in the range of 800 960 MHz. Specified 24 Volt, 900 MHz Characteristics 5.0 W, 900 MHz Output Power = 5.0
0.1. Size:116K motorola
mrf891re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF891/D The RF Line NPN Silicon MRF891 RF Power Transistors MRF891S . . . designed for 24 volt UHF large signal, common emitter amplifier applica- tions in industrial and commercial FM equipment operating in the range of 800 960 MHz. Specified 24 Volt, 900 MHz Characteristics 5.0 W, 900 MHz Output Power = 5.0
9.1. Size:104K motorola
mrf894.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF894/D The RF Line NPN Silicon MRF894 RF Power Transistor . . . designed for 24 volt UHF large signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 804 960 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 Watts RF POWER
9.2. Size:151K motorola
mrf897.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF897/D The RF Line NPN Silicon MRF897 RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 970 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 Wat
9.3. Size:172K motorola
mrf897rr.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF897R/D The RF Line NPN Silicon MRF897R RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 970 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 W
9.4. Size:139K motorola
mrf896.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF896/D The RF Line NPN Silicon MRF896 RF Power Transistors Designed for 24 Volt UHF large signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 960 MHz. Specified 24 Volt, Icq = 8.0 mA (Class AB), 900 MHz Characteristics
9.5. Size:110K motorola
mrf890.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF890/D The RF Line NPN Silicon MRF890 RF Power Transistors Designed for 24 volt UHF large signal, common emitter amplifier applica- tions in industrial and commercial FM equipment operating in the range of 804 960 MHz. Specified 24 Volt, 900 MHz Characteristics 2.0 W, 900 MHz Output Power = 2.0 Watts RF POWER
9.6. Size:151K motorola
mrf897re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF897/D The RF Line NPN Silicon MRF897 RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 970 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 Wat
9.7. Size:196K motorola
mrf899re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF899/D The RF Line NPN Silicon MRF899 RF Power Transistor Designed for 26 Volt UHF large signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 960 MHz. Specified 26 Volt, 900 MHz Characteristics 150 W, 900 MHz Output Power = 150 Wat
9.8. Size:106K motorola
mrf898re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF898/D The RF Line NPN Silicon MRF898 RF Power Transistor . . . designed for 24 Volt UHF large signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 960 MHz. Motorola Advanced Amplifier Concept Package 60 W, 850 960 MHz Specified 24 Volt, 900 MHz
9.9. Size:112K motorola
mrf892re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF892/D The RF Line NPN Silicon MRF892 RF Power Transistor . . . designed for 24 volt UHF large signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 804 960 MHz. Specified 24 Volt, 900 MHz Characteristics 14 W, 900 MHz Output Power = 14 Watts RF POWER
9.10. Size:172K motorola
mrf897r.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF897R/D The RF Line NPN Silicon MRF897R RF Power Transistor Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 970 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 W
9.11. Size:104K motorola
mrf894re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF894/D The RF Line NPN Silicon MRF894 RF Power Transistor . . . designed for 24 volt UHF large signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 804 960 MHz. Specified 24 Volt, 900 MHz Characteristics 30 W, 900 MHz Output Power = 30 Watts RF POWER
9.12. Size:106K motorola
mrf898.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF898/D The RF Line NPN Silicon MRF898 RF Power Transistor . . . designed for 24 Volt UHF large signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 960 MHz. Motorola Advanced Amplifier Concept Package 60 W, 850 960 MHz Specified 24 Volt, 900 MHz
9.13. Size:139K motorola
mrf896re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF896/D The RF Line NPN Silicon MRF896 RF Power Transistors Designed for 24 Volt UHF large signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 960 MHz. Specified 24 Volt, Icq = 8.0 mA (Class AB), 900 MHz Characteristics
9.14. Size:112K motorola
mrf892.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF892/D The RF Line NPN Silicon MRF892 RF Power Transistor . . . designed for 24 volt UHF large signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 804 960 MHz. Specified 24 Volt, 900 MHz Characteristics 14 W, 900 MHz Output Power = 14 Watts RF POWER
9.15. Size:204K motorola
mrf899rev7.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF899/D The RF Line NPN Silicon MRF899 RF Power Transistor Designed for 26 Volt UHF large signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 960 MHz. Specified 26 Volt, 900 MHz Characteristics 150 W, 900 MHz Output Power = 150 Wat
9.16. Size:110K motorola
mrf890re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF890/D The RF Line NPN Silicon MRF890 RF Power Transistors Designed for 24 volt UHF large signal, common emitter amplifier applica- tions in industrial and commercial FM equipment operating in the range of 804 960 MHz. Specified 24 Volt, 900 MHz Characteristics 2.0 W, 900 MHz Output Power = 2.0 Watts RF POWER
9.17. Size:196K motorola
mrf899.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF899/D The RF Line NPN Silicon MRF899 RF Power Transistor Designed for 26 Volt UHF large signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 960 MHz. Specified 26 Volt, 900 MHz Characteristics 150 W, 900 MHz Output Power = 150 Wat
Другие транзисторы: MRF652, MRF652S, MRF653, MRF654, MRF658, MRF839, MRF839F, MRF857S, BC337, MRF891S, MRF894, MRF897, MRF897R, MRF899, MRFC572, MS1226, MS1227
