MSB92WT1G - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор MSB92WT1G - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: MSB92WT1G
   Маркировка: J2D
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: SOT323

Аналоги (замена) для MSB92WT1G

MSB92WT1G Datasheet (PDF)

..1. Size:203K onsemi
msb92wt1g msb92awt1g.pdf

MSB92WT1G,MSB92AWT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCo

..2. Size:98K onsemi
msb92wt1g.pdf

MSB92T1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-59 package COLLECTOR3which is designed for low power surface mount applications.Features This is a Pb-Free DeviceMAXIMUM RATINGS (TA = 25C)1 2Rating Symbol Value UnitBA

6.1. Size:78K motorola
msb92wt1rev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSB92WT1/DPreliminary InformationMSB92WT1PNP Silicon General PurposeMotorola Preferred DevicesHigh Voltage TransistorThis PNP Silicon Planar Transistor is designed for general purpose amplifierPNP GENERAL PURPOSEapplications. This device is housed in the SC-70/SOT-323 packageHIGH VOLTAGE which is designed for lo

6.2. Size:117K onsemi
msb92wt1 msb92awt1.pdf

9.1. Size:174K onsemi
msb92t1g.pdf

9.2. Size:146K onsemi
msb92aswt1g msb92as1wt1g.pdf

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorwww.onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCo

9.3. Size:85K onsemi
msb92aswt1.pdf

MSB92ASWT1G,MSB92AS1WT1GPNP Silicon GeneralPurpose High VoltageTransistorhttp://onsemi.comThis PNP Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323COLLECTORpackage which is designed for low power surface mount applications.3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

9.4. Size:118K onsemi
msb92awt1g.pdf