Биполярный транзистор MSD42T1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MSD42T1G
Маркировка: J1D
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: SOT23
MSD42T1G Datasheet (PDF)
msd42t1g.pdf
MSD42T1GNPN Silicon GeneralPurpose High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-59 packagehttp://onsemi.comwhich is designed for low power surface mount applications.COLLECTORFeatures3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATIN
msd42wt1rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD42WT1/DPreliminary InformationMSD42WT1NPN Silicon General PurposeMotorola Preferred DevicesHigh Voltage TransistorThis NPN Silicon Planar Transistor is designed for general purpose amplifierNPN GENERAL PURPOSEapplications. This device is housed in the SC-70/SOT-323 packageHIGH VOLTAGE which is designed for lo
msd42wt1g nsvmsd42wt1g.pdf
MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
msd42.pdf
MSD42T1GNPN Silicon GeneralPurpose High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-59 packagehttp://onsemi.comwhich is designed for low power surface mount applications.COLLECTORFeatures3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATIN
msd42wt1-t.pdf
MSD42WT1G, MSD42T1GNPN Silicon GeneralPurpose High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323http://onsemi.comand SC-59 packages which are designed for low power surfacemount applications. COLLECTOR3Features These Devices are Pb-Free, Halogen Free/BFR Free and are
msd42swt1g.pdf
MSD42SWT1GNPN Silicon GeneralPurpose High VoltageTransistorThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323http://onsemi.compackage which is designed for low power surface mount applications.COLLECTORFeatures3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliantMAX
nsvmsd42wt1g.pdf
MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
msd42wt1g.pdf
MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
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