Биполярный транзистор MP4303
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: MP4303
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 120
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 20
pf
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: 2-32C1B
Аналоги (замена) для MP4303
MP4303
Datasheet (PDF)
..1. Size:135K toshiba
mp4303.pdf 
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4303 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
..2. Size:174K toshiba
mp4303 .pdf 
MP4303 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4303 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pins) High collector power dissipation (4-device operation) : PT = 4.4 W (Ta = 25C)
9.1. Size:141K toshiba
mp4305.pdf 
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) MP4305 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
9.2. Size:128K toshiba
mp4304.pdf 
MP4304 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) MP4304 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T
9.3. Size:174K toshiba
mp4301 .pdf 
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistor in One) MP4301 High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C) High collector curren
9.4. Size:181K toshiba
mp4305 .pdf 
MP4305 TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One) MP4305 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 4.4 W (Ta = 25C)
9.5. Size:136K toshiba
mp4301.pdf 
MP4301 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4301 High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 4.4 W (Ta = 25C) T High collector current:
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