BD441G datasheet, аналоги, основные параметры
Наименование производителя: BD441G 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO225
📄📄 Копировать
Аналоги (замена) для BD441G
- подборⓘ биполярного транзистора по параметрам
BD441G даташит
..1. Size:76K onsemi
bd435g bd437g bd439g bd441g.pdf 
BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. http //onsemi.com Features 4.0 AMPERES Complementary Types are BD438 and BD442 POWER TRANSISTORS These Devices are Pb-Free and are RoHS Compliant* NPN SILICON MAXIMUM RATINGS COLLECTOR
..2. Size:60K onsemi
bd441g.pdf 
BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http //onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS Pb-Free Packages are Available* NPN SILICON MAXIMUM RATI
9.2. Size:69K st
bd439 bd440 bd441 bd442.pdf 
BD439/BD440 BD441/BD442 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and 1 2 BD442 respectively. 3 SOT-
9.3. Size:41K fairchild semi
bd439 bd441.pdf 
BD439/441 Medium Power Linear and Switching Applications Complement to BD440, BD442 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD439 60 V BD441 80 V VCES Collector-Emitter Voltage BD439 60 V BD441 80 V VCEO Col
9.4. Size:57K samsung
bd439 bd441.pdf 
BD439/441 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS Complement to BD440, BD442 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD439 VCBO 60 V BD441 80 V Collector Emitter Voltage BD439 VCES 60 V BD441 80 V Collector Emitter Voltage BD439 VCEO 60 V 1. Emitter 2.Collector 3.Ba
9.5. Size:59K onsemi
bd435 bd437 bd439 bd441.pdf 
BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium-power silicon NPN transistors can be used for amplifier and switching applications. Complementary types http //onsemi.com are BD438 and BD442. 4.0 AMPERES Features POWER TRANSISTORS Pb-Free Packages are Available* NPN SILICON MAXIMUM RATI
9.6. Size:130K cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 NPN PNP E C TO126 B Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNIT BD434 BD436
9.7. Size:2715K jiangsu
bd439 bd441.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD439 / BD441 TRANSISTOR (NPN) TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD440, BD442 2. COLLECTOR 3. BASE Equivalent Circuit BD439,BD441 o Solid dot = Green molding compound device, if none, the normal device BD439 BD441
9.8. Size:184K lge
bd439 bd441.pdf 
BD439/441(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Amplifier and switching applications 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS(TA=25 unless otherwise noted) 3.900 Symbol Parameter Value Units 3.000 4.100 3.200 VCBO Collector-Base Voltage BD439 60 10.600 V 0.000 11.000 BD441 80 0.300 VCEO Collector-Em
9.10. Size:187K inchange semiconductor
bd441.pdf 
isc Silicon NPN Power Transistor BD441 DESCRIPTION Collector-Emitter Sustaining Voltage - V = 80V(Min) CEO(SUS) Complement to type BD442 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
9.11. Size:117K inchange semiconductor
bd439 bd441.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD439 BD441 DESCRIPTION With TO-126 package Complement to type BD440,BD442 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS V
Другие транзисторы: BD244CG, BD435G, BD436G, BD437G, BD437TG, BD438G, BD439G, BD440G, A940, BD442G, BD675AG, BD675G, BD676AG, BD676G, BD677AG, BD677G, BD678AG
