BD442G datasheet, аналоги, основные параметры
Наименование производителя: BD442G 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: TO225
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BD442G даташит
..1. Size:58K onsemi
bd442g.pdf 
BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium-power silicon PNP transistors can be used for for amplifier and switching applications. Complementary http //onsemi.com types are BD437 and BD441. 4.0 AMP POWER Features TRANSISTORS PNP SILICON Pb-Free Packages are Available* TO-225AA MAXIMUM RATINGS
9.2. Size:69K st
bd439 bd440 bd441 bd442.pdf 
BD439/BD440 BD441/BD442 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in power linear and switching applications. The complementary PNP types are BD440, and 1 2 BD442 respectively. 3 SOT-
9.3. Size:41K fairchild semi
bd440 bd442.pdf 
BD440/442 Medium Power Linear and Switching Applications Complement to BD439, BD441 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD440 - 60 V BD442 - 80 V VCES Collector-Emitter Voltage BD440 - 60 V BD442 - 80 V
9.4. Size:56K samsung
bd440 bd442.pdf 
BD440/442 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS Complement to BD439, BD441 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO - 60 V BD440 - 80 V BD442 BD440 Collector Emitter Voltage VCES - 60 V BD442 - 80 V BD440 Collector Emitter Voltage VCEO - 60 V 1. Emitter 2
9.5. Size:159K onsemi
bd440 bd442.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.6. Size:58K onsemi
bd436 bd438 bd440 bd442.pdf 
BD436, BD438, BD440, BD442 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium-power silicon PNP transistors can be used for for amplifier and switching applications. Complementary http //onsemi.com types are BD437 and BD441. 4.0 AMP POWER Features TRANSISTORS PNP SILICON Pb-Free Packages are Available* TO-225AA MAXIMUM RATINGS
9.7. Size:130K cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 NPN PNP E C TO126 B Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNIT BD434 BD436
9.8. Size:457K jiangsu
bd440 bd442.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD440 / BD442 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD439, BD441 2. COLLECTOR 3. BASE Equivalent Circuit BD440,BD442=Device code Solid dot = Green molding compound device, if none, the normal device BD440 BD442
9.9. Size:183K lge
bd438 bd440 bd442.pdf 
BD438/440/442(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 2.900 1.100 7.800 1.500 Amplifier and switching applications 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.200 10.600 Symbol Parameter Value Units 0.000 11.000 0.300 VCBO Collector-Base Voltage BD438 -45 BD440 -60 V 2.100 BD4
9.11. Size:188K inchange semiconductor
bd442.pdf 
isc Silicon PNP Power Transistor BD442 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -80V(Min) CEO(SUS) Complement to type BD441 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B
9.12. Size:118K inchange semiconductor
bd440 bd442.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD440 BD442 DESCRIPTION With TO-126 package Complement to type BD439,BD441 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS V
Другие транзисторы: BD435G, BD436G, BD437G, BD437TG, BD438G, BD439G, BD440G, BD441G, B772, BD675AG, BD675G, BD676AG, BD676G, BD677AG, BD677G, BD678AG, BD678G
