Справочник транзисторов. BD442G

 

Биполярный транзистор BD442G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD442G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 36 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO225

 Аналоги (замена) для BD442G

 

 

BD442G Datasheet (PDF)

 ..1. Size:58K  onsemi
bd442g.pdf

BD442G BD442G

BD436, BD438, BD440,BD442Plastic Medium PowerSilicon PNP TransistorThis series of plastic, medium-power silicon PNP transistors can beused for for amplifier and switching applications. Complementaryhttp://onsemi.comtypes are BD437 and BD441.4.0 AMP POWERFeaturesTRANSISTORS PNP SILICON Pb-Free Packages are Available*TO-225AAMAXIMUM RATINGS

 9.1. Size:111K  motorola
bd438 bd440 bd442.pdf

BD442G BD442G

Order this documentMOTOROLAby BD438/DSEMICONDUCTOR TECHNICAL DATABD438BD440Plastic Medium Power SiliconBD442PNP Transistor. . . for amplifier and switching applications. Complementary types are BD437 andBD441.4.0 AMPERESPOWER TRANSISTORSPNP SILICONCASE 7708

 9.2. Size:69K  st
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BD442G BD442G

BD439/BD440BD441/BD442COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD439 and BD441 are silicon epitaxial-baseNPN power transistors in Jedec SOT-32 plasticpackage, intented for use in power linear andswitching applications.The complementary PNP types are BD440, and12BD442 respectively.3SOT-

 9.3. Size:41K  fairchild semi
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BD440/442Medium Power Linear and Switching Applications Complement to BD439, BD441 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD440 - 60 V: BD442 - 80 V VCES Collector-Emitter Voltage: BD440 - 60 V: BD442 - 80 V

 9.4. Size:56K  samsung
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BD442G BD442G

BD440/442 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGTO-126APPLICATIONS Complement to BD439, BD441 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO - 60 V: BD440- 80 V: BD442: BD440 Collector Emitter Voltage VCES - 60 V: BD442- 80 V: BD440 Collector Emitter Voltage VCEO - 60 V1. Emitter 2

 9.5. Size:159K  onsemi
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BD442G BD442G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:58K  onsemi
bd436 bd438 bd440 bd442.pdf

BD442G BD442G

BD436, BD438, BD440,BD442Plastic Medium PowerSilicon PNP TransistorThis series of plastic, medium-power silicon PNP transistors can beused for for amplifier and switching applications. Complementaryhttp://onsemi.comtypes are BD437 and BD441.4.0 AMP POWERFeaturesTRANSISTORS PNP SILICON Pb-Free Packages are Available*TO-225AAMAXIMUM RATINGS

 9.7. Size:130K  cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf

BD442G BD442G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyEPITAXIAL SILICON POWER TRANSISTORS BD433 BD434BD435 BD436BD437 BD438BD439 BD440BD441 BD442NPN PNPECTO126 BPlastic PackageIntended for use in Medium Power Linear and Switching ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNITBD434 BD436

 9.8. Size:457K  jiangsu
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD440 / BD442 TRANSISTOR (PNP)TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD439, BD4412. COLLECTOR3. BASE Equivalent Circuit BD440,BD442=Device code Solid dot = Green molding compound device, if none, the normal device BD440 BD442

 9.9. Size:183K  lge
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BD442G BD442G

BD438/440/442(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECOTR 3. BASE 3 21 Features 2.5007.4002.9001.1007.8001.500 Amplifier and switching applications 3.900 3.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.20010.600Symbol Parameter Value Units0.00011.0000.300VCBO Collector-Base Voltage BD438 -45 BD440 -60 V 2.100BD4

 9.10. Size:250K  shantou-huashan
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BD442G

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD442 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

 9.11. Size:188K  inchange semiconductor
bd442.pdf

BD442G BD442G

isc Silicon PNP Power Transistor BD442DESCRIPTIONCollector-Emitter Sustaining Voltage -: V = -80V(Min)CEO(SUS)Complement to type BD441Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-B

 9.12. Size:118K  inchange semiconductor
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD440 BD442 DESCRIPTION With TO-126 package Complement to type BD439,BD441 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS V

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