Справочник транзисторов. BD678G

 

Биполярный транзистор BD678G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BD678G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 750
   Корпус транзистора: TO225

 Аналоги (замена) для BD678G

 

 

BD678G Datasheet (PDF)

 ..1. Size:102K  onsemi
bd678g.pdf

BD678G BD678G

BD676, BD676A, BD678,BD678A, BD680, BD680A,BD682, BD682TPlastic Medium-PowerSilicon PNP Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon PNP Darlingtontransistors can be used as output devices in complementary4.0 AMP DARLINGTONgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesPNP SILICON High DC Current Gain -45, 60, 80, 100 V

 9.1. Size:110K  motorola
bd676 bd678 bd680 bd682.pdf

BD678G BD678G

Order this documentMOTOROLAby BD676/DSEMICONDUCTOR TECHNICAL DATABD676BD676APlastic Medium-PowerBD678Silicon PNP DarlingtonsBD678A. . . for use as output devices in complementary generalpurpose amplifier applica-BD680tions. High DC Current Gain BD680AhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic ConstructionBD682 BD676, 676A, 678, 678A, 680

 9.2. Size:87K  st
bd677a bd679a bd681 bd678a bd680a bd682.pdf

BD678G BD678G

BD677/A/679/A/681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODEAPPLICATION LINEAR AND SWITCHING INDUSTRIAL12EQUIPMENT3SOT-32DESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epi

 9.3. Size:41K  st
bd677 bd677a bd678 bd678a bd679 bd679a bd680 bd680a bd681 bd682.pdf

BD678G BD678G

BD677/A/679/A681BD678/A/680/A/682COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORSn SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD677, BD677A, BD679, BD679A andBD681 are silicon epitaxial-base NPN powertransistors in monolithic Darlington configurationmounted in Jedec SOT-32 plastic package.They are intended for use in medium power linarand switching applications12

 9.4. Size:42K  fairchild semi
bd676a bd678a bd680a bd682.pdf

BD678G BD678G

BD676A/678A/680A/682Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD675A, BD677A, BD679A and BD681 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD676A - 45 V : BD678A - 60 V

 9.5. Size:159K  onsemi
bd676a bd678a bd680a bd682.pdf

BD678G BD678G

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:102K  onsemi
bd678ag.pdf

BD678G BD678G

BD676, BD676A, BD678,BD678A, BD680, BD680A,BD682, BD682TPlastic Medium-PowerSilicon PNP Darlingtonshttp://onsemi.comThis series of plastic, medium-power silicon PNP Darlingtontransistors can be used as output devices in complementary4.0 AMP DARLINGTONgeneral-purpose amplifier applications.POWER TRANSISTORSFeaturesPNP SILICON High DC Current Gain -45, 60, 80, 100 V

 9.7. Size:117K  cdil
bd676 bd678 bd680 bd682 bd684 a.pdf

BD678G BD678G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP DARLIGNTON POWER SILICON TRANSISTORS BD676, 676ABD678, 678ABD680, 680ABD682, 684TO126 Plastic PackageECBFor Use As Output Devices In Complementary General Purpose Amplifier Applications.COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683BD678, 678A, 680, 680A ARE E

 9.8. Size:189K  inchange semiconductor
bd678a.pdf

BD678G BD678G

isc Silicon PNP Darlington Power Transistor BD678ADESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE CComplement to Type BD677AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier a

 9.9. Size:189K  inchange semiconductor
bd678.pdf

BD678G BD678G

isc Silicon PNP Darlington Power Transistor BD678DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60(BR)CEODC Current Gain: h = 750(Min) @ I = -1.5 AFE CComplement to Type BD677Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral-purpose amplifier ap

 9.10. Size:118K  inchange semiconductor
bd676a bd678a bd680a bd682.pdf

BD678G BD678G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD676A/678A/680A/682 DESCRIPTION With TO-126 package Complement to type BD675A/677A/679A/681 DARLINGTON High DC current gain APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute

 9.11. Size:118K  inchange semiconductor
bd676 bd678 bd680.pdf

BD678G BD678G

Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 DESCRIPTION With TO-126 package Complement to type BD675/BD677/BD679 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary generalpurpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

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