Биполярный транзистор BDS12SMD
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDS12SMD
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 43.75
W
Макcимально допустимое напряжение коллектор-база (Ucb): 100
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 200
°C
Граничная частота коэффициента передачи тока (ft): 3
MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO276AB
Аналоги (замена) для BDS12SMD
BDS12SMD
Datasheet (PDF)
..1. Size:41K semelab
bds12smd.pdf 
BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL
0.1. Size:41K semelab
bds12smd05.pdf 
BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL
9.1. Size:338K semelab
bds12n1b.pdf 
SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt
9.2. Size:14K semelab
bds12ig.pdf 
BDS10IGBDS11IGSEMEBDS12IGLABMECHANICAL DATADimensions in mm(inches)SILICON NPN4.83 (0.190)5.08 (0.200)10.41 (0.410)EPITAXIAL BASE IN10.67 (0.420)0.89 (0.035)1.14 (0.045)TO257 METAL PACKAGE3.56 (0.140)Dia.3.81 (0.150)FEATURES1 2 3 HERMETIC TO257 ISOLATED METALPACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS0.64 (0.025)Dia.0.89 (0
9.3. Size:338K semelab
bds12n1a.pdf 
SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitt
9.4. Size:577K semelab
bds12m2a.pdf 
SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A High Voltage Hermetic TO-257AB Isolated Metal Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 100V VCEO Collector Emitter Voltage 100V VEBO E
9.5. Size:210K inchange semiconductor
bds12.pdf 
isc Silicon NPN Power Transistor BDS12DESCRIPTIONHigh Voltage: V = 100V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose power.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
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