Биполярный транзистор BDS16XSMD
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDS16XSMD
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 43.75
W
Макcимально допустимое напряжение коллектор-база (Ucb): 120
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 200
°C
Граничная частота коэффициента передачи тока (ft): 30
MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO276AB
Аналоги (замена) для BDS16XSMD
BDS16XSMD
Datasheet (PDF)
..1. Size:44K semelab
bds16xsmd.pdf BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.
0.1. Size:44K semelab
bds16xsmd05.pdf BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.
8.1. Size:44K semelab
bds16x.pdf BDS16X BDS16XSMD BDS16XSMD05BDS17X BDS17XSMD BDS17XSMD05MECHANICAL DATADimensions in mmSILICON NPN EPITAXIAL BASE4.610.6IN TO220 METAL AND0.8SMD CERAMIC SURFACE MOUNT3.6PACKAGESDia.FEATURES1 2 3 HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS1.0 FULLY ISOLATED (METAL VERSION)2.54 2.
9.1. Size:41K semelab
bds16smd05.pdf BDS16 BDS16SMD BDS16SMD05BDS17 BDS17SMD BDS17SMD05MECHANICAL DATASILICON NPN EPITAXIAL BASEDimensions in mmIN TO220 METAL ANDSMD CERAMIC SURFACE MOUNTPACKAGESFEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION)APPLICATIONS POWER LINEAR AND SWITCHINGTO220M
9.2. Size:41K semelab
bds16smd.pdf BDS16 BDS16SMD BDS16SMD05BDS17 BDS17SMD BDS17SMD05MECHANICAL DATASILICON NPN EPITAXIAL BASEDimensions in mmIN TO220 METAL ANDSMD CERAMIC SURFACE MOUNTPACKAGESFEATURES HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION)APPLICATIONS POWER LINEAR AND SWITCHINGTO220M
9.3. Size:210K inchange semiconductor
bds16.pdf NCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BDS16DESCRIPTIONHigh Voltage: V = 120V(Min)CEVLow Saturation Voltage-: V = 1.5V(Max)@ I = 4ACE(sat) CHigh ReliablityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power linear and switching application andGeneral puepose p
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