Биполярный транзистор BFU520X
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFU520X
Маркировка: *TE
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.45
W
Макcимально допустимое напряжение коллектор-база (Ucb): 24
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2
V
Макcимальный постоянный ток коллектора (Ic): 0.005
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 10500
MHz
Ёмкость коллекторного перехода (Cc): 0.52
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
SOT143B
Аналоги (замена) для BFU520X
BFU520X
Datasheet (PDF)
..1. Size:325K philips
bfu520x.pdf 
BFU520XNPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
0.1. Size:332K philips
bfu520xr.pdf 
BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
0.2. Size:308K nxp
bfu520xr.pdf 
BFU520XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
8.1. Size:329K philips
bfu520.pdf 
BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.2. Size:304K nxp
bfu520.pdf 
BFU520NPN wideband silicon RF transistorRev. 2 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.3. Size:296K nxp
bfu520w.pdf 
BFU520WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU520W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.4. Size:320K nxp
bfu520y.pdf 
BFU520YDual NPN wideband silicon RF transistorRev. 1 20 February 2014 Product data sheet1. Product profile1.1 General descriptionDual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.5. Size:293K nxp
bfu520a.pdf 
BFU520ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
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