Биполярный транзистор BFU550W
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFU550W
Маркировка: ZC*
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.45
W
Макcимально допустимое напряжение коллектор-база (Ucb): 24
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2
V
Макcимальный постоянный ток коллектора (Ic): 0.015
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 11000
MHz
Ёмкость коллекторного перехода (Cc): 0.74
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
SOT323
Аналоги (замена) для BFU550W
BFU550W
Datasheet (PDF)
..1. Size:296K nxp
bfu550w.pdf BFU550WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU550W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.1. Size:331K philips
bfu550xr.pdf BFU550XRNPN wideband silicon RF transistorRev. 1 14 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU550XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
8.2. Size:324K philips
bfu550.pdf BFU550NPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.3. Size:325K philips
bfu550x.pdf BFU550XNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.4. Size:294K nxp
bfu550a.pdf BFU550ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU550A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.5. Size:283K nxp
bfu550.pdf BFU550NPN wideband silicon RF transistorRev. 2.1 17 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz.1.2 Features and ben
8.6. Size:276K nxp
bfu550x.pdf BFU550XNPN wideband silicon RF transistorRev. 2 12 April 2019 Product data sheet1 Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU550X is part of the BFU5 family of transistors, suitable for small signal tomedium power applications up to 2 GHz.1.2 Features and ben
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