Биполярный транзистор 2SA1069A-Z - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1069A-Z
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO-220SMD
Аналоги (замена) для 2SA1069A-Z
2SA1069A-Z Datasheet (PDF)
2sa1069a-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sa1069a-z.pdf
isc Silicon PNP Power Transistor 2SA1069A-ZDESCRIPTIONLow Collector Saturation VoltageFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching regulators,DC/DCconverters, and high frequency powe
2sa1069 2sa1069a.pdf
DATA SHEETSILICON POWER TRANSISTORS2SA1069, 1069APNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGORDERING INFORMATIONThe 2SA1069/1069A are the mold power transistors developed forhigh-speed switching, and is ideal for use as a driver in devices suchPart No. Pac ageas switching regulators, DC/DC converters, and high-frequency power2SA1069 -220ABamplifiers.2SA10
2sa1069 2sa1069a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION With TO-220 package Complement to type 2SC2516/2516A Low collector saturation voltage APPLICATIONS Switching regulators DC-DC converters High-frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (
2sa1069a.pdf
isc Silicon PNP Power Transistor 2SA1069ADESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXI
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050