Биполярный транзистор 2SA1837AF
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1837AF
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20
W
Макcимально допустимое напряжение коллектор-база (Ucb): 230
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 230
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 70
MHz
Ёмкость коллекторного перехода (Cc): 30
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
TO220F
Аналоги (замена) для 2SA1837AF
2SA1837AF
Datasheet (PDF)
..1. Size:171K nell
2sa1837af.pdf 
RoHS RoHS 2SA1837AFSEMICONDUCTORNell High Power ProductsHigh Frequency PNP Power Transistor-1A/-230V/20WFEATURESHigh transition frequency:fT = 70MHz (typ.)Complementary to 2SC4793AFBCTO-220F package which can be Einstalled to the heat sink with one screwTO-220F (2SA1837AF) APPLICATIONSPower amplifier(2)CDriver stage amplifier B(1)PNPE(3)ABSO
7.1. Size:135K toshiba
2sa1837.pdf 
2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 70 MHz (typ.) Complementary to 2SC4793 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VCollector-emitter voltage VCEO -230 VEmitter-base vo
7.2. Size:175K utc
2sa1837.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * High Transition Frequency: fT=70MHZ (Typ.) * Complementary to UTC 2SC4793 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 32SA1837L-TF3-T 2SA1837G-TF3-T TO-220F B C E Tube
7.3. Size:190K jmnic
2sa1837.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1837 DESCRIPTION With TO-220F package Complement to type 2SC4793 High transition frequency APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25
7.4. Size:875K jilin sino
2sa1837.pdf 
PNP PNP Epitaxial Silicon Transistor R 2SA1837 APPLICATIONS Power Amplifier Applications FEATURES V =-230V (min) High collector voltage V =-230V (min) CEOCEO 2SC4793 Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) f T=70MHz(Typ.) RoHS product RoHS Package TO-220MF ORDER MESSAGE Order codes Marking Ha
7.5. Size:414K kexin
2sa1837.pdf 
DIP Type TransistorsTransistorsPNP Transistors2SA1837TO-220MF Units:mm Features High collector voltageVCEO=-230V (min) Complementary to 2SC4793 High transition frequency :fT=70MHz(Typ.) RoHS product Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -230 Collector - Emitter Voltage VCEO -230 V Emit
7.6. Size:936K jsmsemi
2sa1837.pdf 
2SA1837 PNP PNP Epitaxial Silicon Transistor APPLICATIONS Power Amplifier Applications FEATURES VCEO=-230V (min) High collector voltageVCEO=-230V (min) 2SC4793 Complementa
7.7. Size:834K cn evvo
2sa1837.pdf 
Silicon PNP transistorPower Amplifier Applications Complementary to 2SC4793 High collector voltage:VCEO=-230V (min)Note: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to decrease in thereliability significantly even if the operating conditions (i.e.operati
7.8. Size:94K cn minos
2sa1837.pdf 
2SA1837Minos Silicon PNP Epitaxial Type2SA1837Power Amplifier ApplicationsComplementaryto 2SC4793Highcollector voltage:VCEO=-230V (min)Note: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis product todecrease inthereliability significantly even if the operating conditions (i.e
7.9. Size:192K inchange semiconductor
2sa1837.pdf 
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1837DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductComplement to Type 2SC4793Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applicationsABSOLUTE
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