Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injur

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit: mm High voltage: VCEO = -600 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -600 VCollector-emitter voltage VCEO -600 VEmitter-base voltage VEBO -7 VDC IC -0.5 Collector current A Pulse ICP -1 Base current IB

2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955FV General Purpose Amplifier Applications Unit: mmSwitching and Muting Switch Application 1.20.05 0.80.05 Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current: IC = -400 mA (max) 1 2 3Absolute Maximum Ratings (Ta = 25C) Char

2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit: mm Low saturation voltage: VCE (sat) = -0.4 V (max) High-speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitt

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -180 VCollector-emitter voltage VCEO -180 VEmitter-base v

2SA1943NBipolar Transistors Silicon PNP Triple-Diffused Type2SA1943N2SA1943N2SA1943N2SA1943N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = -230 V (min)(2) Complementary to 2SC5200N(3) Recommended for 100-W high-fidelity audio frequency amplifier outpu

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle

2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VColl

2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1953 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current: I = -500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitC

2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1955 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current: I = -400 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitC

2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VColle

2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -140 VColle

2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1954 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @I = -10 mA/I = -0.5 mA C B Large collector current: I = -500 mA (max) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitC

2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications Unit: mm High voltage: VCEO = -400 V Low saturation voltage: V = -1 V (max) CE (sat)(I = -100 mA, I = -10 mA) C BMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -400 VCollector-emitter voltage VCEO -400 VEmitter-b

Ordering number:5098PNP Epitaxial Planar Silicon Transistor2SA1969High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions High fT (fT=1.7GHz typ).unit:mm Large current capacity (IC=400mA).2038A[2SA1969]1 : Base2 : Collector3 : EmitterSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum R

Ordering number:5182NPN Triple Diffused Planar Silicon Transistor2SA1967High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (Cob typ=2.2pF).2010C High reliability (Adoption of HVP process).[2SA1967]JEDEC : TO-220AB 1 : BaseEIAJ : SC46 2 : CollectorSpecifications3

Ordering number:5031PNP Epitaxial Planar Silicon Transistor2SA1965Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1965-unit:mmapplied sets to be made small and slim.2106A Small output capacitance.[2SA1965] Low collectot-to-emitter saturation voltage. Small ON resistance.1 : Base2 : Emitter3 : CollectorSANY

Ordering number:5230PNP Epitaxial Planar Silicon Transistor2SA1963High-Frequecy Low-Noise Amplifier,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=1GHz).unit:mm High gain : | S2le |2=9dB typ (f=1GHz).2018B High cutoff frequency : fT=5GHz typ.[2SA1963]1 : Base2 : Emitter3 : CollectorSpecificationsSANYO : CP

Ordering number : ENN5183B2SA1968LSPNP Triple Diffused Planar Silicon Transistor2SA1968LSHigh-Voltage Amplifier, High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=--900V).unit : mm Small Cob(Cob typ=2.2pF).2079D High reliability(Adoption of HVP process).[2SA1968LS] Package of full isolation type.10.0 4.53.2

Ordering number:ENN5613PNP/NPN Epitaxial Planar Silicon Transistors2SA1973/2SC5310DC/DC Converter ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacitance.2018B Low collector-to-emitter saturation voltage.[2SA1973/2SC5310] High-speed switching.0.4 Ultrasmall package facilitates miniaturization in end 0.16

Ordering number:5183NPN Triple Diffused Planar Silicon Transistor2SA1968High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (Cob typ=2.2pF).2079B High reliability (Adoption of HVP process).[2SA1968] Package of full isolation type.1 : Base2 : Collector3 : Emitte

January 20092SA1962/FJA4213PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17ATO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excel

January 20092SA1943/FJL4215PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17A. High Power Dissipation : 150watts. TO-2641 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Ex

DATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1978PNP EPITAXIAL SILICON TRANSISTORMICROWAVE AMPLIFIERFEATURES PACKAGE DIMENSIONSHigh f (in milimeters)T_2.8+0.2f = 5.5 GHz TYP.T+0.1| S | 2 = 10.0 dB TYP. @f = 1.0 GHz, V = -10 V, I = -15 mA 1.5 0.65 0.1521e CE CHigh speed switching characteristicsEquivalent NPN transistor is the 2SC2

DATA SHEETPRELIMINARY DATA SHEETSilicon Transistor2SA1977PNP EPITAXIAL SILICON TRANSISTORMICROWAVE AMPLIFIERFEATURES PACKAGE DIMENSION (in millimeters)_ 2.8+0.2High fT+0.1f = 8.5 GHz TYP.T1.5 0.65 0.15High gain| S | 2 = 12.0 dB TYP. @f = 1.0 GHz, V = -8 V, I = -20 mA21e CE CHigh-speed switching characterstics2Equivalent NPN transistor

DATA SHEETSilicon Power Transistor2SA1988PNP SILICON TRANSISTORPOWER AMPLIFIERINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SA1988 is PNP Silicon Power Transistor thatdesigned for audio frequency power amplifier.4.7 MAX.15.7 MAX. 3.20.21.5FEATURES4 High Voltage VCEO = -200 V DC Current Gain hFE = 70 to 200 TO-3P Package1 2 3ORDERING INFORMAT

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

2SA1900 Transistors Medium power transistor (-50V, -1A) 2SA1900 Dimensions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = -0.15V at IC / MPT3IB = -500mA / -50mA 2) PC=2W (on 40400.7mm ceramic board) 3) Complements the 2SC5053 (1)Base(2)Collector(3)Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitVCBO -60 VCol

2SA1952TransistorsHigh-speed Switching Transistor (-60V, -5A)2SA1952 Features External dimensions (Units : mm) 1) High speed switching. (tf : Typ. 0.15 s at IC = -3A)2SA19522) Low VCE(sat). (Typ. -0.2V at IC/IB = -3/-0.15A)5.5 1.53) Wide SOA. (safe operating area)4) Complements the 2SC5103.0.9C0.5 Absolute maximum ratings (Ta = 25C)Parameter Symbol Limit

2SA1900TransistorsTransistors2SC5053(96-115-B352)(96-196-D352)297Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference onl

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

2SA1980-OMCCMicro Commercial ComponentsTM2SA1980-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1980-GPhone: (818) 701-4933Fax: (818) 701-4939 2SA1980-LFeatures Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low Collector Saturation Voltage: V =0.3V(Max.)CE(sat) Low Output Capacitance

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Transistor2SA1982Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC53462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.0.65 max.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Mak

Transistor2SA1982Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC53462.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.0.65 max.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Mak

Transistor2SA1961Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC54192.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 200 V1 2 3Col

Transistor2SA1961Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC54192.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 200 V1 2 3Col

UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1TO-3PL ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Lead Free Halogen Free 1 2 32SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube2SA

2SA1980SFPNP Silicon TransistorPIN Connection Description General small signal amplifier 3 Features Low collector saturation voltage : 1 VCE(sat)=-0.3V(Max.) 2 Low output capacitance : Cob=4pF(Typ.) SOT-23F Complementary pair with 2SC5343SF Ordering Information Type NO. Marking Package Code CA 2SA1980SF SOT-23F

2SA1979UFPNP Silicon TransistorDescription PIN Connection Medium power amplifier 3 Features Large collector current : IC=-500mA 1 Suitable for low-Voltage operation 2because of its low saturation voltage Complementary pair with 2SC5342UF SOT-323F Ordering Information Type NO. Marking Package Code A 2SA1979UF SOT-323F Dev

2SA1980UFPNP Silicon TransistorPIN Connection Description General small signal amplifier 3 Features 1 Low collector saturation voltage : 2VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) SOT-323F Complementary pair with 2SC5343UF Ordering Information Type NO. Marking Package Code C 2SA1980UF SOT-323F Device Cod

2SA1980NSemiconductor Semiconductor PNP Silicon TransistorDescription General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343N Ordering Information Type NO. Marking Package Code 2SA1980N A1980 TO-92N Outline Dimensions unit : mm 4.20~4

2SA1979S PNP Silicon Transistor MEDIUM POWER AMPLIFIER CFeatures Large collector current : I =-500mA CMaxBC Suitable for low-Voltage operation because of its low saturation voltage B Complementary pair with 2SC5342S E EOrdering Information SOT-23 Part Number Marking Package AA 2SA1979S SOT-23 * Device Code

2SA1979UPNP Silicon TransistorDescription PIN Connection Medium power amplifier Features 3 Large collector current : ICMax=-500mA Suitable for low-Voltage operation 1 2because of its low saturation voltage Complementary pair with 2SC5342U SOT-323 Ordering Information Type NO. Marking Package Code A 2SA1979U SOT-323

2SA1980UPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : 3 VCE(sat)=-0.3V(Max.) 21 Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343U SOT-323 Ordering Information Type NO. Marking Package Code C 2SA1980U SOT-323 Dev

2SA1981S PNP Silicon Transistor Description C Audio power amplifier application Features BC High h : h =100~320 FE FEB Complementary pair with 2SC5344S E EOrdering Information Part Number Marking Package SOT-23 EA 2SA1981S SOT-23 * Device Code hFE Rank Year & Week Code Factory Management Code Ab

2SA1979NSemiconductor Semiconductor PNP Silicon TransistorDescription Medium power amplifier Features Large collector current : IC = -500mA Low collector saturation voltage enabling low-voltage operation : VCE(sat) = -0.25 Max. Complementary pair with 2SC5342N Ordering Information Type NO. Marking Package Code 2SA1979N A1979 TO-92N Outline Dimensio

2SA1980PNP Silicon TransistorPIN Connection Description General small signal amplifier EFeatures B Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) C Complementary pair with 2SC5343 TO-92 Ordering Information Type NO. Marking Package Code 2SA1980 A1980 TO-92Absolute Maximum Ratings (Ta=25C) C

2SA1980EFPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) 1 Complementary pair with 2SC5343EF 2 SOT-523F Ordering Information Type NO. Marking Package Code A 2SA1980EF SOT-523F Device C

2SA1980S PNP Silicon Transistor Description C General small signal amplifier Features BC Low collector saturation voltage : V = 0.3V(Max.) CE(sat)B Low output capacitance : C = 4pF(Typ.) obE Complementary pair with 2SC5343S EOrdering Information SOT-23 Part Number Marking Package CA 2SA1980S SOT-23 *

2SA1979MSemiconductor Semiconductor PNP Silicon TransistorDescription Medium power amplifier Features Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342M Ordering Information Type NO. Marking Package Code 2SA1979M 1979 TO-92M Outline Dimensions unit : mm

2SA1979Semiconductor Semiconductor PNP Silicon TransistorDescription PIN Connection Medium power amplifier EFeatures B Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage C Complementary pair with 2SC5342 TO-92 Ordering Information Type NO. Marking Package Code 2SA1979 A1979 TO-92

2SA1979SFPNP Silicon TransistorDescription PIN Connection Medium power amplifier 3 Features Large collector current : ICMax=-500mA 1 Suitable for low-Voltage operation because of its low saturation voltage 2 Complementary pair with 2SC5342SF SOT-23F Ordering Information Type NO. Marking Package Code AA 2SA1979SF SOT-23F

2SA1981NSemiconductor Semiconductor PNP Silicon TransistorDescription Audio power amplifier application Features High hFE : hFE=100~320 Complementary pair with 2SC5344N Ordering Information Type NO. Marking Package Code 2SA1981N A1981 TO-92N Outline Dimensions unit : mm 4.20~4.402.25 Max.0.52 Max.0.90 Max.1.27 Typ.0.40 Max.1 2 33.55 Typ

2SA1980EPNP Silicon TransistorPIN Connection Description General small signal amplifier Features 3 Low collector saturation voltage : VCE(sat)=-0.3V(Max.) 1 Low output capacitance : Cob=4pF(Typ.) 2 Complementary pair with 2SC5343E SOT-523 Ordering Information Type NO. Marking Package Code A 2SA1980E SOT-523 Device Code

2SA1981SFPNP Silicon TransistorDescription PIN Connection Audio power amplifier application 3 Features High hFE : hFE=100~320 1 Complementary pair with 2SC5344SF 2 SOT-23F Ordering Information Type NO. Marking Package Code EA 2SA1981SF SOT-23F Device Code hFE Rank Year&Week Code Absolute maximum ratings (Ta=25C

2SA1981PNP Silicon TransistorDescription PIN Connection Audio power amplifier application EBFeatures C High hFE : hFE=100~320 TO-92 Complementary pair with 2SC5344 Ordering Information Type NO. Marking Package Code 2SA1981 A1981 TO-92 Absolute maximum ratings (Ta=25C) Characteristic Symbol Ratings UnitCollector-Base voltage VCBO -35 VCollec

2SA1980MPNP Silicon TransistorDescription PIN Connection General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343M TO-92M Ordering Information Type NO. Marking Package Code 2SA1980M 1980 TO-92M Absolute maximum ratings Ta=25C Characte

2SA1960Silicon NPN EpitaxialADE-208-3921st. EditionApplication Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225.Features High voltage large current operation.VCEO = 80 V, IC = 300 mA High fT.fT = 1.3 GHz Small output capacitance.Cob =

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rati

2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.) G H Complements of the 2SC5343 1 Emitter 1112 Collector 222J3 Base 333CLASSIF

2SA1981 -0.8 A, -35 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain Complementary Pair with 2SC5344 G HEmitterCollector CLASSIFICATION OF hFE Base JProduct-Rank 2SA1981-O 2SA1981-Y A DMillimeterRange 100~200 160~320

2SA1939 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196ABSOLUTE MAXIMUM RATING (Ta=25cc)ccCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collec

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SA1952 TRANSISTOR (PNP)FEATURES TO-252-2L -5A,-60V Middle Power Transistor Suitable for Middle Power Driver Complementary NPN Types:2SC5103 Low Collector-emitter saturation voltage21. BASE13APPLICATIONS 2. COLLECTOR Middle Power Driver LED Driver3. EMITTER Power Suppl

JMnic Product Specification Silicon PNP Power Transistors 2SA1987 DESCRIPTION With TO-3PL package Complement to type 2SC5359 High collector voltage APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified ou

JMnic Product Specification Silicon PNP Power Transistors 2SA1908 DESCRIPTION With TO-3PML package Complement to type 2SC5100 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION With TO-3PL package Complement to type 2SC5199 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1988 DESCRIPTION With TO-3PN package High collector-emitter voltage APPLICATIONS For audio frequency power amplifier and industrial use PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYM

JMnic Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1986 DESCRIPTION With TO-3P(I) package Complement to type 2SC5358 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1909 DESCRIPTION With TO-3PML package Complement to type 2SC5101 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION With TO-3P(I) package Complement to type 2SC5242 High collector voltage: VCEO=-230V(Min) APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.

JMnic Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION With TO-3P(I) package Complement to type 2SC5198 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1907 DESCRIPTION With TO-3PML package Complement to type 2SC5099 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

JMnic Product Specification Silicon PNP Power Transistors 2SA1940 DESCRIPTION With TO-3P(I) package Complement to type 2SC5197 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

JMnic Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbo

2SA1908Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 120 V ICBO VCB=120V 10max AIEBOVCEO 120 V VEB=6V

2SA1909Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 140 V ICBO VCB=140V 10max AVCEO 140 V IEBO VEB=6V

2SA1907Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 80 V ICBO VCB=80V 10max AVCEO 80 V IEBO VEB=6V 10m

2SA1980(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE FeaturesLow collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob =4pF (Typ.) Complementary pair with 2SC5343 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V

Complementary NPN-PNP Power Bipolar Transistor R 2SC5198 2SA1941 APPLICATIONS Audio Products Home Amplifiers Home Receivers Auto Audio Amplifiers FEATURES VCEO=140V (min) High collector voltageVCEO

PNP PNP Epitaxial Silicon Transistor R 2SA1943 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEOV =250V (min) V =250V (min) CEO CEO 2SC5200 Complementary to 2SC5200 100W

PNP so`FU\cOlvso`FU\cOlvso`FU\cOlv so`FU\cOlvSilicon PNP Epitaxial Transistor R2SA1941 APPLICATIONS (u (u (u (u Power Amplifier Applications \ OR YFUT NTyr'` FEATURES NTyr'` NTyr'`

2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features 2SC5171I(BR3DA5171I) High fT, complementary pair with 2SC5171I(BR3DA5171I). / Applications General power and d

ST 2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 1 ACollector Current (Pw = 20 ms) -ICP 2 A0.5 PC W Collector Power Dissipation2 1) Junction Temperature Tj

RoHS 2SA1943BL Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP triple diffusion planar transistor-15A/-230V/150W5.0020.000.2018.003.300.20TO-3PLFEATURESHigh breakdown voltage, VCEO = -230V (min) Complementary to 2SC5200BL0.603.20TO-3PL package which can be installed to the 5.450.05 5.450.05heat sink with one screw1 2 3 APPLICATIONSS

RoHS 2SA1941B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP triple diffusion planar transistor-10A/-140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO = -140V (min) 5.450.1 5.450.11.4Complementary to 2SC5198BB C ETO-3P package which can be installed to the

SMD Type TransistorsPNP Transistors2SA19461.70 0.1 Features Low collector saturation voltage High fT,fT=180MHz(typ) High collector current ICM=-1A0.42 0.10.46 0.1 Small package for mounting Complements to 2SC52121.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25

SMD Type TransistorsPNP Transistors2SA1979UF Features Large collector current : ICMax=-500mA Complements to 2SC5342UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA

SMD Type TransistorsPNP Transistors2SA1980UF Features Low collector saturation voltage Low output capacitance : Cob=4pF(Typ.) Complements to 2SC5343UF1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Coll

SMD Type TransistorsPNP Transistors2SA19471.70 0.1 Features High fT,fT=100MHz(typ) High collector current ICM=-1.5A Small package for mounting0.42 0.10.46 0.1 Complements to 2SC52141.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -2

SMD Type TransistorsPNP Transistors2SA19451.70 0.1 Features High voltage High fT,fT=150MHz(typ) High collector current ICM=-600mA0.42 0.10.46 0.1 Small package for mounting Complements to 2SC52111.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emi

SMD Type TransistorsPNP Transistors2SA1953SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-500mA1 2 Collector Emitter Voltage VCEO=-12V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 C

SMD Type TransistorsPNP Transistors2SA1971SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-400V0.42 0.10.46 0.1 Marking: A*L1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -400 V

SMD Type TransistorsPNP Transistors2SA1900SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1A Collector Emitter Voltage VCEO=-50V Complements the 2SC50530.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -

SMD Type TransistorsPNP Transistors2SA1948SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-120V Complementary to 2SC52130.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage V

SMD Type TransistorsPNP Transistors2SA1954 Features Low saturation voltage: VCE (sat) (1) = -15 mV (typ.) @IC = -10 mA/IB = -0.5 mA Large collector current: IC = -500 mA (max)1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -12 V Emitter - Base V

SMD Type orSMD Type TransistICsPNP Transistors 2SA1981SFSOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13FeaturesHigh hFE: hFE=100 to 320 Complementary pair with 2SC5344SF1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter vo

SMD Type TransistorsPNP Transistors2SA19441.70 0.1 Features High voltage Low collector-to-emitter saturation voltage. High hFE hFE=400 to 8000.42 0.10.46 0.1 Small package for mounting Complements to 2SC52091.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Col

2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)

2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171(3DA5171) Features: High f , complementary pair with 2SC5171(3DA5171). T/Absolute maximum ratings(Ta=25) Sym

2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)

2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features: High f , complementary pair with 2SC5171I(3DA5171I). T/Absolute maximum ratings(Ta=25)

2SA1964(3CA1964) PNP /SILICON PNP TRANSISTOR () Purpose: High-voltage switching(audio output amplifier transistor, stabilized power supply transistor). h f 2SC5248(3DA5248) TFEFeatures: Flat DC curren

2SA1941(3CA1941) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications. 70W 2SC51983DA5198 Features: Recommend for 70W high fidelity audio frequency amplifier output stage, Complementary to 2SC5198(3DA5198). /Absolute maximum ratings(Ta=25)

Silicon NPN transistorFeatures: Power Amplifier Applications Complementary to 2SC5200 High collector voltage:VCEO=230V (min) Recommended for 100-W high-fidelity audio frequencyamplifier Output stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant change intemperature, etc.) may cause this produc

2SA1941Silicon PNP transistorPower Amplifier Applications Complementary to 2SC5198 High collector voltage:VCEO=-140V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicatioof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to d

2SA1941T6TLSilicon PNP Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle

2SA1943T7TLSilicon PNP Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5200APPLICATIONSPower amplifier applicationsRecommended for 100W high fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -230 VCBOV Collector-

2SA1943Minos High Power ProductsPNP TRANSISTORSFeatures:Power Amplifier ApplicationsComplementaryto2SC5200Highcollector voltage:VCEO=-230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis pro

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1940DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC5197APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1943DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5200APPLICATIONSPower amplifier applicationsRecommended for 100W high fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base V

2SA1941 Transistor Silicon PNP Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=-140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SC5198 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -140 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Volta

isc Silicon PNP Power Transistor 2SA1987DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5359Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amp

isc Silicon PNP Power Transistor 2SA1931DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3299Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1943NDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5200NMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency a

isc Silicon PNP Power Transistor 2SA1908DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC5100Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1942DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOComplement to Type 2SC5199Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1988DESCRIPTIONHigh VoltageTO-3P package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1988 is PNP silicon power transistor thatdesigned for audio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SA1964DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC5248Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXI

isc Silicon PNP Power Transistor 2SA1943DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V =- 230V(Min)(BR)CEOComplement to Type 2SC5200Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amp

isc Silicon PNP Power Transistor 2SA1986DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamp

isc Silicon PNP Power Transistor 2SA1909DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC5101Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) Good Linearity of hFE Complement to Type 2SC5242 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

isc Silicon PNP Power Transistor 2SA1941DESCRIPTIONLow Collector Saturation Voltage-: V =- 2.0V(Min) @I =- 7ACE(sat) CGood Linearity of hFEComplement to Type 2SC5198Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1952DESCRIPTIONLow Collector Saturation Voltage:V = -0.3(V)(Max)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC5103100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MA

isc Silicon PNP Power Transistor 2SA1907DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC5099Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon PNP Power Transistor 2SA1940DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC5197Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage app

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1932DESCRIPTIONHigh collector breakdown voltageComplementary to 2SC5174100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon PNP Power Transistor 2SA1939DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC5196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app