2SA2029M3T5G - аналоги и даташиты биполярного транзистора

 

2SA2029M3T5G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: 2SA2029M3T5G
   Маркировка: F9
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.27 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 140 MHz
   Ёмкость коллекторного перехода (Cc): 3.5 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT723

 Аналоги (замена) для 2SA2029M3T5G

 

2SA2029M3T5G Datasheet (PDF)

 ..1. Size:93K  onsemi
 2sa2029m3t5g.pdf pdf_icon

2SA2029M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ

 0.1. Size:97K  onsemi
 nsv2sa2029m3t5g.pdf pdf_icon

2SA2029M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ

 5.1. Size:45K  onsemi
 2sa2029m3-d.pdf pdf_icon

2SA2029M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210-460 (Typical) PNP GENERAL Low VCE(sat),

 5.2. Size:116K  onsemi
 2sa2029m3.pdf pdf_icon

2SA2029M3T5G

2SA2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... 2SA1995 , 2SA1998 , 2SA2002 , 2SA2013-TD-E , 2SA2016-TD-E , 2SA2026 , 2SA2027 , 2SA2029FHA , TIP142 , 2SA2039-E , 2SA2039-TL-E , 2SA2040-E , 2SA2040-TL-E , 2SA2088FRA , 2SA2112-AN , 2SA2119GP , 2SA2119TGP .

History: DTS431M | 2SC4691 | CHDTA144WUGP

 

 
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