2SA2029M3T5G datasheet, аналоги, основные параметры

Наименование производителя: 2SA2029M3T5G  📄📄 

Маркировка: F9

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.27 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 140 MHz

Ёмкость коллекторного перехода (Cc): 3.5 pf

Статический коэффициент передачи тока (hFE): 120

Корпус транзистора: SOT723

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2SA2029M3T5G даташит

 ..1. Size:93K  onsemi
 2sa2029m3t5g.pdf pdf_icon

2SA2029M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ

 0.1. Size:97K  onsemi
 nsv2sa2029m3t5g.pdf pdf_icon

2SA2029M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typ

 5.1. Size:45K  onsemi
 2sa2029m3-d.pdf pdf_icon

2SA2029M3T5G

2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210-460 (Typical) PNP GENERAL Low VCE(sat),

 5.2. Size:116K  onsemi
 2sa2029m3.pdf pdf_icon

2SA2029M3T5G

2SA2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)

ПОКАЗАТЬ ЕЩЁ

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