2SA2125-TD-H - Даташиты. Аналоги. Основные параметры

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Ordering number ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications

Ordering number EN7988B 2SA2125/2SC5964 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit mm Complementary to 2SC5948 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit VCBO Collector-base voltage -200 V VCEO Collector-emitter voltage -200 V VEBO Emitter-base voltage -5 V

2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Collector

Ordering number ENN8022 2SA2127 PNP Epitaxial Planar Silicon Transistor 2SA2127 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Co

Ordering number EN7920A 2SA2124 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2124 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Spe

Ordering number ENN7990 2SA2126 PNP Epitaxial Planar Silicon Transistor 2SA2126 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25

2SA2126 Ordering number EN7990A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications 2SA2126 Applications DC / DC converter, relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications

Ordering number EN8022A 2SA2127 Bipolar Transistor http //onsemi.com -50V, -2A, Low VCE(sat), PNP Single MP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT process Low saturation voltage High current capacity and wide ASO Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions R

Ordering number EN7920B 2SA2124 Bipolar Transistor http //onsemi.com -30V, -2A, Low VCE(sat), PNP Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT processes Low collector-to-emitter saturation voltage Large current capacity High-speed switching Specifications Absolute Maximum Ratings at T

Ordering number EN7990A 2SA2126 Bipolar Transistor http //onsemi.com -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta

Ordering number EN7990A 2SA2126 Bipolar Transistor http //onsemi.com -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers Features Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2122G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5950G Package Features Code High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic SMini3-F2 Marking symbol 7L insertion through the tape

SMD Type Transistors PNP Transistors 2SA2126 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V 0.127 High current capacitance. +0.1 0.80-0.1 max Low collector-to-emitter saturation voltage High-speed switching. + 0.1 1 Base 2.3 0.60-

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2120 DESCRIPTION Recommended for audio frequency amplifier output stage Complementary to 2SC5948 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon PNP Power Transistor 2SA2126 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CB

isc Silicon PNP Power Transistor 2SA2121 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Complement to Type 2SC5949 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for audio frequency amplifier output sta