2SA2188 - Даташиты. Аналоги. Основные параметры

2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications Unit mm High voltage VCEO = -550 V High speed tf = 40 ns (typ.) (IC = -0.5A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -550 V Collector-emitter voltage VCEO -550 V Emitter-base voltage VEBO -7 V DC IC -1

2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Unit mm Low collector-emitter saturation VCE(sat) = -1.0 V max Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V DC IC -5.0 A Collector current

2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit mm Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency fT = 80 MHz (typ.) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO - 230 V Collector-emitter voltage VCEO - 230 V Emitter-base voltage VEBO - 5 V DC IC - 1.0 A

Ordering number ENA0269 2SA2186 PNP Epitaxial Planar Silicon Transistor 2SA2186 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Rat

Ordering number ENA0269A 2SA2186 Bipolar Transistor http //onsemi.com -50V, -2A, Low VCE(sat), PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at