Биполярный транзистор 2SB1203T-E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1203T-E
Маркировка: B1203
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 130 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: TO251
Аналоги (замена) для 2SB1203T-E
2SB1203T-E Datasheet (PDF)
2sb1203s-e 2sb1203s-h 2sb1203s 2sb1203s 2sb1203t-e 2sb1203t-h 2sb1203t 2sb1203t.pdf
Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE
2sb1203 2sd1803.pdf
Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c
2sb1203 2sd1803.pdf
Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE
2sb1203.pdf
SMD Type TransistorsPNP Transistors2SB1203TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching speed0.127+0.10.80-0.1max Complementary to 2SD1803+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolu
2sb1203 3ca1203.pdf
2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,
2sb1203.pdf
isc Silicon PNP Power Transistor 2SB1203DESCRIPTIONHigh current and high fTLow collector-to-emitter saturation voltageExcellent linearity of hFEFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergeneral high-current swi
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050