2SC536K - описание и поиск аналогов

2SC536(BR3DG536K) 2SC536K(BR3DG536K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Large current capacity and wide ASO / Applications Small signal general purpose amplifier appl

2SC536KM(BR3DG536KM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity and wide ASO. / Applications Small signal general purpose amplifier applications

Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1

Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter

PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION (in mm) High fT 2.1 0.1 14 GHz TYP. 1.25 0.1 High gain S21e 2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold package ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Para

Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25 C) Para

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536N TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO. 2. COLLECTOR APPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to High Frequency Range. Equivalent Circuit C536N=Device code C536N Solid dot=Green molding compound devi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC536S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base V