Биполярный транзистор 2SC5633 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5633
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT89
2SC5633 Datasheet (PDF)
2sc5633.pdf
SMALL-SIGNAL TRANSISTOR 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit 2SC5633 is a super mini package resin sealed 4.6 MAXsilicon NPN epitaxial transistor, 1.51.6It is designed for high voltage application. CE B0.53 FEATURE 0.4MAXLow collector to emitter saturation voltage. 0.48
2sc5637.pdf
Ordering number:ENN6465NPN Triple Diffused Planar Silicon Transistor2SC5637Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5637] Adoption of MBIT process.3.4 5.616.03.12.82.0 2
2sc5638.pdf
Ordering number:ENN6466NPN Triple Diffused Planar Silicon Transistor2SC5638Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5638] Adoption of MBIT process.3.4 5.616.03.12.82.0 2
2sc5639.pdf
Ordering number:ENN6467NPN Triple Diffused Planar Silicon Transistor2SC5639Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5639] Adoption of MBIT process.3.4 5.616.03.12.82.0 2
2sc5632.pdf
Transistors2SC5632Silicon NPN epitaxial planar typeFor high-frequency amplification and switchingUnit: mm0.15+0.100.3+0.10.050.0 Features3 High transition frequency fT S-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing1 2(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C
2sc5631.pdf
2SC5631Silicon NPN EpitaxialUHF / VHF Wide Band AmplifierADE-208-981A (Z)2nd. EditionMar. 2001Features High gain bandwidth productfT = 11 GHz typ. High power gain and low noise figure ;PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. CollectorNote: Marking is JR.2SC5631Absolute Maximum Rati
l2sc5635lt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;
l2sc5635wt1g.pdf
LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050