:mm 2.50.50.51.5 1

Ordering number:ENN6465NPN Triple Diffused Planar Silicon Transistor2SC5637Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5637] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

Ordering number:ENN6466NPN Triple Diffused Planar Silicon Transistor2SC5638Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5638] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

Ordering number:ENN6467NPN Triple Diffused Planar Silicon Transistor2SC5639Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2174 High reliability (Adoption of HVP process).[2SC5639] Adoption of MBIT process.3.4 5.616.03.12.82.0 2

Transistors2SC5632Silicon NPN epitaxial planar typeFor high-frequency amplification and switchingUnit: mm0.15+0.100.3+0.10.050.0 Features3 High transition frequency fT S-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing1 2(0.65) (0.65)1.30.12.00.2 Absolute Maximum Ratings Ta = 25C

2SC5631Silicon NPN EpitaxialUHF / VHF Wide Band AmplifierADE-208-981A (Z)2nd. EditionMar. 2001Features High gain bandwidth productfT = 11 GHz typ. High power gain and low noise figure ;PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. CollectorNote: Marking is JR.2SC5631Absolute Maximum Rati

SMALL-SIGNAL TRANSISTOR 2SC5633 FOR HIGH FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit 2SC5633 is a super mini package resin sealed 4.6 MAXsilicon NPN epitaxial transistor, 1.51.6It is designed for high voltage application. CE B0.53 FEATURE 0.4MAXLow collector to emitter saturation voltage. 0.48

:mm 1.60.40.40.8 1

:mm 2.10.4250.4251.25 1

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635LT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)S-L2SC5635LT1G2.High gain,low noise3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.4.S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control Change Requirements;

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC5635WT1G1.High gain bandwidth product.(Typ.fT=8.0GHz)2.High gain,low noise S-L2SC5635WT1G3.Can operate at low voltage4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC