Справочник транзисторов. 2SC6095-TD-E

 

Биполярный транзистор 2SC6095-TD-E - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC6095-TD-E
   Маркировка: QF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 3.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6.5 V
   Макcимальный постоянный ток коллектора (Ic): 2.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 350 MHz
   Ёмкость коллекторного перехода (Cc): 14 pf
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: SOT89

 Аналоги (замена) для 2SC6095-TD-E

 

 

2SC6095-TD-E Datasheet (PDF)

 7.1. Size:425K  sanyo
2sc6095.pdf

2SC6095-TD-E
2SC6095-TD-E

2SC6095Ordering number : ENA0411ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6095High-Voltage Switching ApplicationsApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switchin

 7.2. Size:322K  onsemi
2sc6095.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0411A2SC6095Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipat

 8.1. Size:50K  sanyo
2sc6092ls.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0834 2SC6092LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6092LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb

 8.2. Size:40K  sanyo
2sc6099.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0435 2SC6099SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6099High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

 8.3. Size:51K  sanyo
2sc6090ls.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0996 2SC6090LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6090LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symb

 8.4. Size:50K  sanyo
2sc6097.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0412 2SC6097NPN Epitaxial Planar Silicon Transistor2SC6097High-Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

 8.5. Size:40K  sanyo
2sc6098.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0413 2SC6098NPN Epitaxial Planar Silicon Transistor2SC6098High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dis

 8.6. Size:48K  sanyo
2sc6093.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0274 2SC6093LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6093LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating

 8.7. Size:47K  sanyo
2sc6096.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0434 2SC6096SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6096High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

 8.8. Size:142K  sanyo
2sc6094.pdf

2SC6095-TD-E
2SC6095-TD-E

2SC6094 No. NA0410 NN N 2SC6094

 8.9. Size:295K  onsemi
2sc6099-e 2sc6099.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

 8.10. Size:401K  onsemi
2sc6099.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0435A2SC6099Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

 8.11. Size:410K  onsemi
2sc6097.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

 8.12. Size:408K  onsemi
2sc6098.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

 8.13. Size:198K  onsemi
2sc6096 2sc6096-td-h.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

 8.14. Size:307K  onsemi
2sc6097-e 2sc6097.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0412A2SC6097Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissi

 8.15. Size:315K  onsemi
2sc6096.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0434A2SC6096Bipolar Transistorhttp://onsemi.com( )100V, 2A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipati

 8.16. Size:330K  onsemi
2sc6094.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0410A2SC6094Bipolar Transistorhttp://onsemi.com( )60V, 3A, Low VCE sat , NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipatio

 8.17. Size:300K  onsemi
2sc6098-e 2sc6098.pdf

2SC6095-TD-E
2SC6095-TD-E

Ordering number : ENA0413A2SC6098Bipolar Transistorhttp://onsemi.com( )80V, 2.5A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dis

 8.18. Size:170K  inchange semiconductor
2sc6090.pdf

2SC6095-TD-E
2SC6095-TD-E

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6090DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1500V (Min)(BR)CEOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)

 8.19. Size:250K  inchange semiconductor
2sc6099.pdf

2SC6095-TD-E
2SC6095-TD-E

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6099DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25

 8.20. Size:213K  inchange semiconductor
2sc6097.pdf

2SC6095-TD-E
2SC6095-TD-E

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6097DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25

 8.21. Size:250K  inchange semiconductor
2sc6098.pdf

2SC6095-TD-E
2SC6095-TD-E

isc Silicon NPN Power Transistor 2SC6098DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.22. Size:181K  inchange semiconductor
2sc6093.pdf

2SC6095-TD-E
2SC6095-TD-E

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6093DESCRIPTIONLow saturation voltageBuilt-in damper diode type100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage color display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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