Биполярный транзистор 2SD2137A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2137A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 30 MHz
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO220-3L
2SD2137A Datasheet (PDF)
2sd2137a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L 2SD2137A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) 3. EMITTER Allowing Automatic Insertion with Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U
2sd2137a.pdf
isc Silicon NPN Power Transistor 2SD2137ADESCRIPTIONCollectorEmitter Sustaining VoltageV 80 V(Min)CEO:Low Collector Saturation Voltage: V = 1.2V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sd2137.pdf
Power Transistors2SD2137, 2SD2137ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1417 and 2SB1417AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearity5.0 0.1Low collector to emitter saturation voltage VCE(sat)10.0 0.2 1.0Allowing supply with the radial taping90Absolute Maximum Ratings (TC=25
2sd2137.pdf
2SD2137(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V
2sd2137 to-220f.pdf
2SD2137(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTER 1 2 3Features High forward current transfer ratio hFE which hassatisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60
2sd2137.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2137DESCRIPTIONSilicon NPN triple diffusion planar typeComplementary to 2SB1417Low Collector to Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAllowing supply with the radial tapingAPPLICATIONSDesigned for power amplifiersABSOLUTE MAXIMUM RATING
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050