MJE13002I5 datasheet, аналоги, основные параметры
Наименование производителя: MJE13002I5 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 5 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO126
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Аналоги (замена) для MJE13002I5
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MJE13002I5 даташит
..1. Size:208K foshan
mje13002i5.pdf 
MJE13002I5(3DD13002I5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
5.1. Size:209K foshan
mje13002i6.pdf 
MJE13002I6(3DD13002I6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
5.2. Size:216K foshan
mje13002i7.pdf 
MJE13002I7(3DD13002I7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.1. Size:304K motorola
mje13002.pdf 
Order this document MOTOROLA by MJE13002/D SEMICONDUCTOR TECHNICAL DATA * MJE13002 MJE13003* Designer's Data Sheet *Motorola Preferred Device SWITCHMODE Series 1.5 AMPERE NPN SILICON NPN Silicon Power Transistors POWER TRANSISTORS 300 AND 400 VOLTS These devices are designed for high voltage, high speed power switching 40 WATTS inductive circuits where fall time is criti
6.2. Size:276K utc
mje13002-e.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator s,inverters, DC-DC converter, Motor con
6.3. Size:303K utc
mje13002g.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002-E designed for use in high volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator s,inverters, DC-DC converter, Motor co
6.4. Size:278K utc
mje13002.pdf 
UNISONIC TECHNOLOGIES CO., LTD MJE13002 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13002 designed for use in high volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator s,inverters, DC-DC converter, Motor control
6.5. Size:248K cdil
mje13002 13003.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MJE13002 MJE13003 UNIT VCEO(sus) Collector Emitter Voltage 300
6.6. Size:365K sisemi
mje13002aht.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE SERIES TRANSISTORS MJE13002AHT NPN MJE
6.7. Size:445K sisemi
mje13002aht 1.pdf 
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT NPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT
6.8. Size:407K blue-rocket-elect
mje13002f1.pdf 
MJE13002F1(BR3DD13002F1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc
6.9. Size:456K blue-rocket-elect
mje13002e2.pdf 
MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc
6.10. Size:456K blue-rocket-elect
mje13002e1.pdf 
MJE13002E1(BR3DD13002E1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High frequenc
6.11. Size:592K blue-rocket-elect
mje13002dg1.pdf 
MJE13002DG1(BR3DD13002DG1K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications High freque
6.12. Size:78K first silicon
mje13002b.pdf 
SEMICONDUCTOR MJE13002B TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED B C SWITCHING APPLICATION. FEATURES Excellent Switching Times N DIM MILLIMETERS ton=0.5 S(Max.), tf=0.7 S(Max.), at IC=0.8A A 4 70 MAX E K B 4 80 MAX High Collector Voltage VCBO=700V. G C 3 70 MAX D D 0 45 E 1 00 F 1 27 G 0 85 H 0 45 _
6.13. Size:199K foshan
mje13002f5.pdf 
MJE13002F5(3DD13002F5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.14. Size:195K foshan
mje13002vh1.pdf 
MJE13002VH1(3DD13002VH1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 400 V
6.15. Size:189K foshan
mje13002h6.pdf 
MJE13002H6(3DD13002H6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.16. Size:181K foshan
mje13002h1.pdf 
MJE13002H1(3DD13002H1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.17. Size:197K foshan
mje13002f6.pdf 
MJE13002F6(3DD13002F6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.18. Size:236K foshan
mje13002h5.pdf 
MJE13002H5(3DD13002H5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.19. Size:218K foshan
mje13002g2.pdf 
MJE13002G2(3DD13002G2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.20. Size:269K foshan
mje13002g5.pdf 
MJE13002G5(3DD13002G5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.21. Size:240K foshan
mje13002de1.pdf 
MJE13002DE1(3DD13002DE1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600
6.22. Size:213K foshan
mje13002g1.pdf 
MJE13002G1(3DD13002G1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.23. Size:220K foshan
mje13002g6.pdf 
MJE13002G6(3DD13002G6) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.24. Size:193K foshan
mje13002f2.pdf 
MJE13002F2(3DD13002F2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
6.25. Size:120K inchange semiconductor
mje13002.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13002 DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN DESCRIPTION 1 Base Collector;
Другие транзисторы: MJE13002G, MJE13002G1, MJE13002G2, MJE13002G5, MJE13002G6, MJE13002H1, MJE13002H5, MJE13002H6, 2N2222A, MJE13002I6, MJE13002I7, MJE13002VH1, MJE13003DG1, MJE13003DG5, MJE13003DI1, MJE13003DI3, MJE13003DI5
